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Photoresist, its preparation method, application and modification method of medical material surface

A photoresist and matrix material technology, applied in the field of biomedical materials, can solve the problems of influence, high price, decomposition or coating function damage, etc., and achieve the effect of reducing costs, reducing steps, and good biodescriptivity

Active Publication Date: 2020-06-30
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, photoresist is cytotoxic, so it is necessary to transfer other biocompatible functional coatings to the material to be modified by using the photoresist pattern as a template. However, in this process, the photoresist is removed. Ultraviolet radiation or organic solvents are required, and ultraviolet light or organic solvents will inevitably cause decomposition of the introduced biomedicine or damage the function of the coating itself
In addition, whether the photoresist is removed by means of ultraviolet light irradiation, two-step development or by organic solvents, the photoresist washed from the surface of the material will inevitably contaminate the introduced biomedical function. coating, affecting its normal function
In addition, the photoresist and developer used in traditional photolithography technology are complex, expensive and cytotoxic

Method used

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  • Photoresist, its preparation method, application and modification method of medical material surface
  • Photoresist, its preparation method, application and modification method of medical material surface
  • Photoresist, its preparation method, application and modification method of medical material surface

Examples

Experimental program
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Effect test

Embodiment 1

[0041]This embodiment provides a new type of photoresist, which includes a coating containing both photosensitive functional groups and amino functional groups prepared by plasma chemical vapor deposition. The thickness of the coating is 1 nm, and the precursor is allylamine vapor.

[0042] This embodiment also provides a method for preparing a novel photoresist, comprising the following steps:

[0043] Put the silicon wafer into the vacuum chamber of the plasma polymerization equipment, and pump the vacuum to 0.1Pa, pass in 5sccm argon gas, and perform plasma sputtering cleaning under the conditions of radio frequency power 100W and bias voltage -100V; sputtering cleaning is completed Finally, the vacuum chamber was evacuated to 0.1Pa, and 5sccm allylamine vapor and 2sccm argon gas were introduced to make the working pressure 6Pa; under the conditions of 60W radio frequency power, -50V bias voltage and 20% pulse duty cycle, 10 Minute film deposition, and finally a coating co...

Embodiment 2

[0047] This embodiment provides a new type of photoresist, which includes a coating containing both photosensitive functional groups and amino functional groups prepared by plasma chemical vapor deposition. The thickness of the coating is 1000 nanometers, and the precursor is a mixed gas of ammonia and acetylene.

[0048] This embodiment also provides a method for preparing a novel photoresist, comprising the following steps:

[0049] Put the silicon wafer into the vacuum chamber of the plasma polymerization equipment, and pump the vacuum to 0.1Pa, pass in 5sccm argon gas, and perform plasma sputtering cleaning under the conditions of radio frequency power 100W and bias voltage -100V; sputtering cleaning is completed Finally, the vacuum chamber is evacuated to 0.1Pa, and 2sccm ammonia gas, 1sccm acetylene and 1sccm argon gas are introduced to make the working pressure 5Pa; under the condition that the RF power is 60W, the bias voltage is -50V, and the pulse duty ratio is 20%. ...

Embodiment 3

[0053] This embodiment provides a new type of photoresist, which includes a coating containing both photosensitive functional groups and amino functional groups prepared by plasma chemical vapor deposition. The thickness of the coating is 500 nanometers, and the precursor is a mixed gas of nitrogen, acetylene and hydrogen.

[0054] This embodiment also provides a method for preparing a novel photoresist, comprising the following steps:

[0055] Put the silicon wafer into the vacuum chamber of the plasma polymerization equipment, and pump the vacuum to 0.1Pa, pass in 5sccm argon gas, and perform plasma sputtering cleaning under the conditions of radio frequency power 100W and bias voltage -100V; sputtering cleaning is completed Finally, the vacuum chamber is evacuated to 0.1Pa, and 2sccm nitrogen, 1sccm acetylene, 1sccm hydrogen and 1sccm argon are introduced to make the working pressure 6Pa; the RF power is 60W, the bias voltage is -50V, and the pulse duty cycle is 20%. Thin ...

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Abstract

The invention relates to the field of biomedical materials, and in particular to a novel photoresist, a preparation method and application thereof, and a method for modifying the surface of a medicalmaterial. The novel photoresist includes a coating prepared by a plasma chemical vapor deposition method and containing both a photosensitive functional group and an amino functional group, wherein the coating can be used as a photoresist and is biocompatible. The coating can not only be used as a photoresist, but also has good biocompatibility. In addition, the amino group can also provide a reaction site for grafting functionalized molecules, and can construct micro-patterns with different functions. Further, the preparation of the coating by plasma chemical vapor deposition requires only one step, which greatly reduces the steps of photoresist coating and greatly reduces the preparation cost of the photoresist.

Description

technical field [0001] The invention relates to the field of biomedical materials, and in particular to a novel photoresist, its preparation method, application and surface modification method of medical materials. Background technique [0002] The birth of micrographics has played a vital role in the development of semiconductor, microelectronics, and biomedical fields. Among them, photolithography is the most mature and widely used micro-pattern manufacturing technology. Photolithography mainly consists of five steps: substrate preparation, photoresist application, soft drying, exposure, and development. The advantage of photolithography is that it can precisely control the shape and size of the formed pattern, and in addition, it can generate the outline on the entire chip surface at the same time. However, photoresist is cytotoxic, so it is necessary to transfer other biocompatible functional coatings to the material to be modified by using the photoresist pattern as a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004
CPCG03F7/004
Inventor 杨志禄黄楠杨彤
Owner SOUTHWEST JIAOTONG UNIV
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