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Color radiant cooler based on Tamm structure

A cooler, TAM's technology, applied in the field of radiation cooling, can solve the problems of complex color control, color sensitivity to incident angle changes, and large color difference of the three primary colors, achieving high color purity, no conflict between color rendering and cooling, and good cooling performance Effect

Active Publication Date: 2019-08-09
SUZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the color control of these existing color radiation coolers is complicated and the color difference from the three primary colors of the standard subtractive color method is relatively large. In addition, the color is more sensitive to the change of the incident angle.

Method used

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  • Color radiant cooler based on Tamm structure
  • Color radiant cooler based on Tamm structure
  • Color radiant cooler based on Tamm structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] A yellow radiation cooler based on the Tam structure, the preparation method is as follows:

[0038] S1) Select a piece of SiO after ion beam cleaning 2 For the glass base layer, use electron beam evaporation technology to deposit Ag metal film layer with a thickness of 24nm;

[0039] S2) Then use radio frequency magnetron reactive sputtering technology to deposit a SiC dielectric layer A with a thickness of 30nm on the metal film layer, perform 15min pre-sputtering before film deposition, then deposit a SiC film at room temperature, and finally perform high temperature annealing treatment;

[0040] S3) Deposit MgF with a thickness of 56 nm on dielectric layer A using electron beam evaporation technique 2 Dielectric layer B, evaporation background vacuum degree is 2×10 -4 Pa;

[0041] S4) Then use radio frequency magnetron reactive sputtering technology to deposit a SiC dielectric layer C with a thickness of 30nm on the dielectric layer B, and the sputtering method i...

Embodiment 2

[0047] A magenta radiation cooler based on a Tam structure, the preparation method of which is as follows:

[0048] S1) Select a piece of SiO after ion beam cleaning 2 For the glass base layer, use electron beam evaporation technology to deposit Ag metal film layer with a thickness of 22nm;

[0049] S2) Then use radio frequency magnetron reactive sputtering technology to deposit a SiC dielectric layer A with a thickness of 38 nm on the metal film layer. Pre-sputter for 15 minutes before film deposition, then deposit SiC film at room temperature, and finally perform high-temperature annealing treatment;

[0050] S3) Deposit MgF with a thickness of 72 nm on dielectric layer A using electron beam evaporation technique 2 Dielectric layer B, evaporation background vacuum degree is 2×10 -4 Pa;

[0051] S4) Then use radio frequency magnetron reactive sputtering technology to deposit a SiC dielectric layer C with a thickness of 38nm on the dielectric layer B, and the sputtering me...

Embodiment 3

[0057] A cyan radiation cooler based on a Tam structure, the preparation method of which is as follows:

[0058] S1) Select a piece of SiO after ion beam cleaning 2 For the glass base layer, use electron beam evaporation technology to deposit Ag metal film layer with a thickness of 23nm;

[0059] S2) Then use radio frequency magnetron reactive sputtering technology to deposit a SiC dielectric layer A with a thickness of 47 nm on the metal film layer. Pre-sputter for 15 minutes before film deposition, then deposit SiC film at room temperature, and finally perform high-temperature annealing treatment;

[0060] S3) Deposit MgF with a thickness of 88nm on dielectric layer A using electron beam evaporation technique 2 Dielectric layer B, evaporation background vacuum degree is 2×10 -4 Pa;

[0061] S4) Then use radio frequency magnetron reactive sputtering technology to deposit a SiC dielectric layer C with a thickness of 47nm on the dielectric layer B, and the sputtering method...

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Abstract

The invention discloses a color radiant cooler based on a Tamm structure. The color radiant cooler based on the Tamm structure comprises a base, a metal film layer, a dielectric film layer A and a dielectric film layer G are sequentially arranged on the base from bottom to top, the metal film layer, the dielectric film layer A and a dielectric film layer D form the Tamm structure, a distributed type bragg reflector is formed by the dielectric film layer A and the dielectric film layer D, and a selective emitter is formed by a dielectric film layer E to the dielectric film layer G. The color radiant cooler based on the Tamm structure has the beneficial effects that compared with a traditional radiant cooler, and the color radiant cooler has a cooling function and has colors to be widely used in aspects such as aesthetics and decoration. A simplified color difference calculation method is provided to find three colors proximate with three complementary colors, the designed color purity is higher, so that the combination gets more colors, the cooling effect of devices is mainly related with the selective emitter, regulation and control of the colors do not affect the cooling effect much, color development and cooling do not conflict.

Description

technical field [0001] The invention relates to the technical field of radiation cooling, in particular to a color radiation cooling device based on a Tam structure. Background technique [0002] Radiation cooling technology has a wide range of applications and prospects in energy-saving buildings, electronic / photoelectric devices, and personal thermal management due to its advantages such as no need for external energy, environmental friendliness, and energy saving. The temperature of cosmic space is about 3K, which is a huge natural cold source. Any object can radiate energy as long as its temperature is greater than absolute zero. According to Wien's displacement law: when the earth's temperature is 300K, the wavelength corresponding to the maximum radiation ability of a black body is about 9.6 μm, and this peak wavelength is located in the transparent window of the atmosphere (ie 8-13 μm). Therefore, radiation cooling uses the transparent window of the atmosphere in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/08C23C14/06C23C14/10C23C14/18C23C14/30C23C14/35
CPCG02B5/0816C23C14/30C23C14/18C23C14/35C23C14/0036C23C14/0635C23C14/0694C23C14/10C23C14/0652C23C28/30C23C28/322C23C28/341C23C28/345C23C14/0015C23C28/00C08J5/18G02B5/008F25B23/003C23C14/024G02B1/005H05K7/20418C23C14/022
Inventor 李孝峰盛春香安怡澹杜俊张程叶燕陈林森
Owner SUZHOU UNIV
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