Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-purity silicon carbide, silicon carbide wafer and preparation method of high-purity silicon carbide

A technology of high-purity silicon carbide and silica, which is applied in the direction of silicon carbide, chemical instruments and methods, carbide, etc., can solve the problems of high cost and complicated manufacturing process of high-purity silicon carbide, and achieve good crystal integrity and uniform resistivity , the effect of uniform crystal form

Active Publication Date: 2019-08-09
SHENZHEN EIGEN EQUATION GRAPHENE TECH CO LTD
View PDF7 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a high-purity single crystal silicon, silicon carbide wafer and a preparation method thereof, aiming at solving the problems of complex manufacturing process and high cost of high-purity silicon carbide in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-purity silicon carbide, silicon carbide wafer and preparation method of high-purity silicon carbide
  • High-purity silicon carbide, silicon carbide wafer and preparation method of high-purity silicon carbide
  • High-purity silicon carbide, silicon carbide wafer and preparation method of high-purity silicon carbide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] (1) The natural silica is crushed to a particle size of about 5 μm by a double-roller mill, and transferred to HNO with a concentration of 1 mol / L 3 and 3 mol / L of H 2 SO 4 After immersing in the mixed solution for 50 min, filter it, rinse the solid material with deionized water, and dry it in a vacuum oven at 150°C.

[0055] (2) Weigh 100.0 g of treated silica powder and 10.0 g of pulverized graphene powder, place them in a 500 ml polytetrafluoroethylene tank, add 200.0 g of agate beads, and ball mill for 18 hours to obtain a solid mixture; The solid mixture was placed in a high-temperature carbonization furnace with argon as a protective gas, and calcined at 1900 °C for 13 h to obtain a pre-treated sample; the pre-treated sample was soaked in 5 mlol / L HF solution, mixed and stirred for 50 min, and passed through a bag type After filtering, it was transferred to a muffle furnace and calcined at 420 °C for 4 h under an air atmosphere to obtain intermediate product A. ...

Embodiment 2

[0062] (1) The natural silica is crushed to a particle size of about 5 μm by a double-roller mill, and transferred to HNO with a concentration of 1 mol / L 3 and 2 mol / L of H 2 SO 4 After immersing in the mixed solution for 50 min, filter it, rinse the solid material with deionized water, and dry it in a vacuum oven at 150°C.

[0063](2) Weigh 60.0 g of treated silica powder and 10.0 g of pulverized graphene powder, put them in a 500 ml polytetrafluoroethylene tank, add 200.0 g of agate beads, and ball mill for 11 h to obtain a solid mixture. The solid mixture was placed in a high-temperature carbonization furnace with argon as a protective gas, and calcined at 1350 °C for 13 h to obtain a pre-treated sample, which was soaked in 2 mlol / L HF solution, mixed and stirred for 40 min, and passed through a bag type After filtering, it was transferred to a muffle furnace and calcined at 650 °C for 4 h under an air atmosphere to obtain intermediate product A.

[0064] (3) Weigh 560.0...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses high-purity silicon carbide, a silicon carbide wafer and a preparation method of high-purity silicon carbide. The preparation method of high-purity silicon carbide comprises the steps that natural silica is pulverized and subjected to first pickling to obtain silica powder; graphene is pulverized and uniformly mixed with the silica powder, the mixture is subjected to firstsintering under a protective gas atmosphere or a purified gas atmosphere, and a first sintering product is subjected to second pickling and then subjected to second sintering under an oxidizing gas atmosphere to obtain an intermediate product A; the intermediate product A is uniformly mixed with the silica powder and then subjected to third sintering under a protective gas atmosphere or a purification atmosphere, and a third sintering product is subjected to third pickling to obtain an intermediate product B; the intermediate product B is uniformly mixed with the pulverized graphene and then subjected to fourth sintering under a protective gas atmosphere or a purification atmosphere to obtain high-purity silicon carbide. The problems are solved that preparation processes of high-purity silicon carbide in the prior art are complicated and the cost is too high.

Description

technical field [0001] The invention relates to the technical field of new materials, in particular to a high-purity single crystal silicon, a silicon carbide wafer and a preparation method thereof. Background technique [0002] Silicon carbide is a third-generation semiconductor material, which has more advantages than silicon semiconductor materials. The band gap of silicon carbide single crystal material is 3.26 eV, which is about 3 times that of silicon crystal, the thermal conductivity is high, about 3.3 times that of silicon crystal, and the electron saturation migration rate is high, about 2.5 times that of silicon crystal. It also has 10 times the breakdown electric field of silicon crystal. Therefore, silicon carbide can meet the new requirements of modern electronic technology for harsh conditions such as high temperature, high power, high voltage, high frequency, and radiation resistance. It is called a revolutionary semiconductor material and is used in national...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/97B82Y40/00C30B29/36C30B23/00C30B25/00
CPCC01B32/97B82Y40/00C30B29/36C30B23/00C30B25/00C01P2006/80C01P2004/13
Inventor 刘剑洪陈超陈文沛林文忠杨明刘彬杨鹏刚扶勇欢孙学良欧阳小平吴奇
Owner SHENZHEN EIGEN EQUATION GRAPHENE TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com