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Quantum dot light emitting diode, display panel and manufacturing method

A quantum dot luminescence and manufacturing method technology, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problem that quantum dots are easily washed off, the electron transport layer is easily washed off by developer, and the luminous effect of the quantum dot luminescent layer is affected and other problems, to achieve the effect of increasing the residual amount, increasing the contact area, and enhancing the luminous effect

Active Publication Date: 2019-08-06
BOE TECH GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, photolithography is used to prepare the patterned quantum dot layer of QLED. When patterning the quantum dot layer, the electron transport layer with a loose structure is easily washed off by the developer, and the quantum dots on the natural electron transport layer are also easily washed off.
For the electron transport layer with a relatively compact structure, the contact area between the electron transport layer and the quantum dots of the light-emitting layer is basically the surface area of ​​the electron transport layer, which is relatively small, and there are fewer quantum dots that can be bound, which is easy to affect the quantum dot light emission. layer glow effect

Method used

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  • Quantum dot light emitting diode, display panel and manufacturing method
  • Quantum dot light emitting diode, display panel and manufacturing method
  • Quantum dot light emitting diode, display panel and manufacturing method

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Embodiment Construction

[0068] In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0069] At present, photolithography is used to prepare the imaged quantum dot layer. When patterning the quantum dot layer, the electron transport layer with a loose structure is easily washed off by the developer, and the quantum dots on the natural electron transport layer are also easily washed off. For the electron transport layer with a relatively compact structure, the contact area between the electron transport layer and the quantum dots of the light-emitting layer is basically the surface area of ​​the electron transport layer, which is relatively small, so when the quantum dots are washed off, the possibility of destroying the quantum dots The nature of quantum dots i...

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Abstract

The application discloses a quantum dot light emitting diode, a display panel and a manufacturing method, which are used to retain more quantum dots when patterning a quantum dot layer. The QLED includes an electron transport layer with plurality of holes, and a quantum dot light emitting layer located on the electron transport layer. The electron transport layer directly contacts the quantum dotlight emitting layer.

Description

technical field [0001] The present application relates to the technical field of light emitting devices, in particular to a quantum dot electroluminescent diode, a display panel and a manufacturing method. Background technique [0002] Quantum Dot (Quantum Dot, referred to as QD), as a new type of light-emitting material, has the advantages of narrow light-emitting spectrum, adjustable light-emitting wavelength, high spectral purity, etc. Quantum Dot Light Emitting Diodes (QLED for short) ) has become the main direction of research on new display devices. [0003] At present, photolithography is used to prepare the patterned quantum dot layer of QLED. When patterning the quantum dot layer, the electron transport layer with a loose structure is easily washed off by the developer, and the quantum dots on the natural electron transport layer are also easily washed off. . For the electron transport layer with a relatively compact structure, the contact area between the electro...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/16H01L33/06H10K59/35H10K50/15H10K50/81H10K59/353H10K71/00
Inventor 张爱迪
Owner BOE TECH GRP CO LTD
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