Combined magnetic field arc ion plating and twin-target high-power pulse magnetron sputtering method

Abstract

The invention provides a combined magnetic field arc ion plating and twin-target high-power pulse magnetron sputtering method, and belongs to the technical field of material surface treatment. The method aims at solving the problems of contamination of large particles in arc ion plating to thin films, the use limitations of target materials, losses of magnetic filtering on arc plasma, the instability of high-power pulse magnetron sputtering and the like. A device comprises a bias power source, an arc ion plating target source, an arc ion plating target source power source, a multi-stage magnetic field device, a multi-stage magnetic field device power source, a movable coil device, a movable coil device power source, a waveform matching device, a twin-target high-power pulse magnetron sputtering target source, a twin-target high-power pulse magnetron sputtering target source power source, an oscilloscope and a vacuum chamber. The thin films are deposited, wherein the device is connected, a system is started, when the vacuum degree in the vacuum chamber is smaller than 10-4 Pa, working gas is introduced, a plating power source is switched on, the bias power source is used for adjusting energy of arc plasma, large particle defects are eliminated and transmitting of the composite plasma is guided through the multi-stage magnetic field device and the movable coil device, losses in the vacuum chamber are reduced, and preparation process parameters are set.

Description

Technical field [0001] The invention relates to a high-power pulse magnetron sputtering method for arc ion plating and twin target combined with a magnetic field, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin film by arc ion plating, the current density of arc spot is as high as 2.5~5×10 10 A / m 2 , Causing molten liquid metal to appear at the arc spot on the surface of the target, which is sprayed out in the form of droplets under the action of the partial plasma pressure, attached to the surface of the film or embedded in the film to form "Macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the moving speed of electrons is far greater than that of ions, the number of electrons reaching the surface of large particles per unit time ...

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Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses low-melting point pure metals or multi-element alloy materials and non-metallic materials (such as graphite and semiconductor materials Si) as targets, which are prone to large particle defects, curved magnetic filter technology causes low arc plasma transmission efficiency, and the use of target elements and uniform ablation limitation, thin film deposition density and defects, deposition position limitation and workpiece shape limitation caused by vacuum chamber space and target source layout design, etc. (such as AlSi alloy) and non-metallic materials (such as graphite and semiconductor material Si, etc.) as the target of high-power pulse magnetron sputtering of twin targets, two different unit targets or unit and multi-component, and two The combination of multi-element targets and other materials can realize multi-element composite plasma generation, and then can deposit various units, multi-element and compound types and films with different element ratios, and use the bipolar characteristics of twin target high-power pulse magnetron sputtering power to eliminate the current The charge accumulation of high-power pulsed magnetron sputtering discharge causes the problems of sparking and ion resorption, and then uses the arc ion plating method to realize the high-melting point refractory target material to generate continuous and stable plasma with high ionization rate, combined with the movable coil The combined effect of the magnetic field constraint of the device and its own bias electric field attraction can eliminate the large particle defects contained in the arc plasma. At the same time, the moving coil device is used to control the transmission direction of the arc plasma in the vacuum chamber, and the substrate at any position in the vacuum chamber can be realized. The film deposition on the surface of the workpiece and the control and adjustment of the film composition can reduce the loss of composite plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the shape of the substrate, and make the surface of the workpiece when negative bias is applied. Under the condition of high pressure, the ion energy is adjusted, and the large particle defects in the arc plasma are removed by using the bias electric field suppression effect on the surface of the substrate, so as to prepare continuous and dense high-quality films, and at the same time realize the control of the content of target elements in the film and reduce the use of The production cost of the alloy target, the improvement of the transmission efficiency of the plasma, the increase of the deposition rate of the film, and the reduction or even elimination of the adverse effects of large particle defects on the microstructure of the film, continuous dense deposition and performance, propose a combined magnetic field arc ion plating High Power Pulsed Magnetron Sputtering with Twin Targets

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