Module device for improving interference resistance of frequency converter

Abstract

The invention discloses a module device for improving the interference resistance of a frequency converter. The device comprises a plurality of insulated gate bipolar transistor modules and a plurality of energy storage capacitors, wherein the insulated gate bipolar transistor modules and the energy storage capacitors are in arrangement and are arranged in the same plane, and in addition, the upper side and the lower side of the plane where the insulated gate bipolar transistor modules and the energy storage capacitors are positioned are independently provided with a lamination busbar and a water-cooling plate. By use of the device, rectification modules and frequency conversion modules are subjected to planar arrangement, interference intensity is reduced, magnetic field distribution evenness is improved, and a purpose of improving interference performance is achieved.

Description

technical field [0001] The invention relates to the application field of frequency converters, in particular to a module device for improving the anti-interference of frequency converters. Background technique [0002] At present, there are generally three types of inverter module installation forms: [0003] One is the phase separation arrangement, but the wiring in this way is complicated, the DC part needs to be connected by wires, the current direction is more complicated, the electromagnetic distribution is messy, and there is a lot of interference; [0004] The second is the split layout of rectification and frequency conversion, but this method is easy to amplify the inductance due to the inductance of the connecting wires, and because the current at the connection point of the copper bar is converged, the current density of each part in the laminated busbar is uneven, and there is a lot of interference; [0005] The third is to adopt the "U" laminated busbar structu...

AI Technical Summary

Problems solved by technology

[0003] One is the phase separation arrangement, but the wiring in this way is complicated, the DC part needs to be connected by wires, the current direction is more complicated, the electromagnetic distribution is messy, and there is a lot of interference;

[0004] The second is the split layout of rectification and frequency conversion, but this method is easy to amplify the inductance due to the inductance of the connecting wires, and because the current at the connection point of the copper bar is converged, the current density of each part in the laminated busbar is uneven, and there is a lot of interference;

[0005] The third is to adopt the "U" stacked busbar structure. Since the entire insulated gate bipolar crystal (IGBT) module is in a magnetic field, the magnetic field affects the direction and speed of electron flow in the IGBT module with the magnitude of the current, and the power control of the inverter is disturbed.

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