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Micron full-color qled array device and its preparation method based on deep silicon etching template quantum dot transfer process

A deep silicon etching, quantum dot technology, applied in semiconductor devices, electric solid devices, electrical components and other directions, can solve the problems of complex process, difficult to achieve multi-color quantum dot filling and transfer, etc., to achieve color conversion, low cost , Spin coating with high quality effect

Active Publication Date: 2021-10-26
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, ordinary Micro-LEDs still have great difficulties in realizing multi-color display, such as complicated process, and it is difficult to realize the filling and transfer of multi-color quantum dots

Method used

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  • Micron full-color qled array device and its preparation method based on deep silicon etching template quantum dot transfer process
  • Micron full-color qled array device and its preparation method based on deep silicon etching template quantum dot transfer process
  • Micron full-color qled array device and its preparation method based on deep silicon etching template quantum dot transfer process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0084] Example 1 Micron full-color QLED array device based on deep silicon etching template quantum dot transfer process

[0085] The epitaxial wafer structure selected for the substrate material in this implementation case is as follows figure 1 As shown, a standard blue LED epitaxial wafer with a p-n structure includes a sapphire substrate 1; a gallium nitride buffer layer 2 grown on the sapphire substrate; an n-type gallium nitride layer 3 grown on the buffer layer; A quantum well active layer 4 on the quantum well active layer; a p-type gallium nitride layer 5 grown on the quantum well active layer.

[0086] The specific preparation method of the Micro-LED array device is as follows:

[0087] (1) if figure 2 As shown, using plasma-enhanced chemical vapor deposition (PECVD) technology, in In x Ga 1-x Evaporation of a layer of 150nm thick SiO on N / GaN quantum well blue LED epitaxial wafer 2 Dielectric layer 6, PECVD grown SiO 2 The way is to pass 5% SiH into the react...

Embodiment 2

[0108] Example 2 Micron full-color QLED array device based on deep silicon etching template quantum dot transfer process

[0109] The epitaxial wafer structure selected for the substrate material in this implementation case is as follows figure 1 As shown, a standard blue LED epitaxial wafer with a p-n structure includes a sapphire substrate 1; a gallium nitride buffer layer 2 grown on the sapphire substrate; an n-type gallium nitride layer 3 grown on the buffer layer; A quantum well active layer 4 on the quantum well active layer; a p-type gallium nitride layer 5 grown on the quantum well active layer.

[0110] The specific preparation method of the Micro-LED array device is as follows:

[0111] (1) if figure 2 As shown, using plasma-enhanced chemical vapor deposition (PECVD) technology, in In x Ga 1-x Evaporation of a layer of 200nm thick SiO on N / GaN quantum well blue LED epitaxial wafer 2 Dielectric layer 6, PECVD grown SiO 2 The way is to pass 5% SiH into the react...

Embodiment 3

[0132] Example 3 Micron full-color QLED array device based on deep silicon etching template quantum dot transfer process

[0133] The epitaxial wafer structure selected for the substrate material in this implementation case is as follows figure 1 As shown, a standard blue LED epitaxial wafer with a p-n structure includes a sapphire substrate 1; a gallium nitride buffer layer 2 grown on the sapphire substrate; an n-type gallium nitride layer 3 grown on the buffer layer; A quantum well active layer 4 on the quantum well active layer; a p-type gallium nitride layer 5 grown on the quantum well active layer.

[0134] The specific preparation method of the Micro-LED array device is as follows:

[0135] (1) if figure 2 As shown, using plasma-enhanced chemical vapor deposition (PECVD) technology, in In x Ga 1-x Evaporation of a layer of 250nm thick SiO on N / GaN quantum well blue LED epitaxial wafer 2 Dielectric layer 6, PECVD grown SiO 2 The way is to pass 5% SiH into the react...

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Abstract

The invention discloses a micron full-color QLED array device based on a deep silicon etching template quantum dot transfer process. On the blue LED epitaxial wafer, there is an arrayed square mesa structure penetrating through the p-type GaN layer, quantum well active layer, and deep to the n-type GaN layer, on which micron holes are etched. Every 2*2 of the mesa structure constitutes an RGB pixel unit, and the four micron holes are filled with red, green, and yellow quantum dots respectively, and one self-emitting blue light / filled blue light quantum dot. Use deep silicon etching technology to etch through the micron holes on the silicon wafer, align the micron holes on the silicon wafer with the quantum dot filling area on the Micro-LED, and spin-coat the quantum dots through the micron holes on the silicon wafer into Micro‑LEDs. And discloses its preparation method. Three different deep silicon etching masks can complete the spin-coating of green, red, and yellow quantum dots in Micro-LEDs, realize full-color display of RGB pixel units, and form QLED array devices.

Description

technical field [0001] The invention relates to a micron full-color QLED array device based on a deep silicon etching template quantum dot transfer process and a preparation method thereof, belonging to the technical field of semiconductor lighting and display. Background technique [0002] As a lighting source widely used at present, light-emitting diodes have the advantages of high efficiency, good impact and shock resistance, high reliability, long life, and environmental protection compared with traditional lighting sources. Group III nitride materials are direct bandgap semiconductors, and their bandgap covers the infrared-visible-ultraviolet band, which has become the main material used in the current solid-state high-efficiency lighting technology. Compared with traditional incandescent lighting, LED light source has the advantages of using low-voltage power supply, less energy consumption, strong applicability, high stability, short response time, no pollution to the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/50H01L33/44
CPCH01L27/156H01L33/502H01L33/007H01L33/0095H01L33/32H01L33/40
Inventor 刘斌蒋迪余俊驰王轩陶涛潘丹峰谢自力周玉刚陈敦军修向前张荣
Owner NANJING UNIV
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