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A microstructure packaging method and a packaging device

A packaging method and microstructure technology, applied in the direction of microstructure devices, manufacturing microstructure devices, microstructure technology, etc., can solve the problems of insufficient filling of microholes/groove edges, slow filling speed of small cavities, complex front and rear processes, etc. , to achieve the effects of reducing the difficulty of filling, reducing the volume of the microstructure, and increasing the reliability

Active Publication Date: 2019-06-25
INSTR TECH & ECONOMY INST P R CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the development of glass reflow towards complexity and high density, the buried column method generally has problems such as complex front and rear processes, low yield, insufficient filling of microholes / groove edges, slow filling speed of small cavities, and large residual stress.

Method used

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  • A microstructure packaging method and a packaging device
  • A microstructure packaging method and a packaging device
  • A microstructure packaging method and a packaging device

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Embodiment Construction

[0048] According to the basic idea of ​​the present disclosure, a microstructure encapsulation method is provided, including: etching conductive silicon pillars and silicon grooves on the upper surface of a single crystal silicon wafer, and remaining between the bottom of the silicon groove and the back surface of the single crystal silicon wafer The monocrystalline silicon material is the microstructure functional layer; the glass powder is filled into the silicon groove; the glass powder is sintered at a temperature above the softening point of the glass powder to form a glass body; the functional structure is etched on the back of the monocrystalline silicon wafer The microstructure and frame of the electrical connection structure; the cap and the frame are bonded by bonding process, the microstructure is hermetically packaged, and metal electrodes are deposited on the conductive silicon pillars to achieve ohmic contact with the external circuit. This method discretizes the ...

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Abstract

The invention provides a microstructure packaging method, which comprises the following steps that: a conductive silicon column and a silicon groove are etched on the upper surface of a monocrystalline silicon wafer, and a monocrystalline silicon material left between the bottom of the silicon groove and the back surface of the monocrystalline silicon wafer is a microstructure functional layer; asilicon groove is filled with the glass powder; the glass powder is sintered at a high temperature above the softening point of the glass powder to form a glass body; a microstructure containing a functional structure and an electrical connection structure and a frame are etched on the back surface of the monocrystalline silicon wafer; the cap and the frame are bonded through a bonding process, and the microstructure is sealed and packaged; And depositing a metal electrode on the conductive silicon column to realize ohmic contact with an external circuit.

Description

technical field [0001] The disclosure belongs to the technical field of micro-electro-mechanical systems, in particular to a microstructure packaging method, and also to a packaging device. Background technique [0002] In the field of micro-electromechanical systems, the micro-cavity structure of micron size is used to hermetically package the device, which plays a role in physical protection for the device and can also isolate the environment inside and outside the package, such as realizing the device working in a vacuum environment. Silicon-glass anodic bonding technology is currently the most mature microstructure packaging method. However, with the continuous development of microstructures towards integration, the high complexity of signal transmission and interconnection has become a major problem for anodic bonding packaging. Through Glass Via (TGV) technology is considered to be the key technology for next-generation 3D integration to solve this problem. Its final f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B7/00
Inventor 杜晓辉刘帅刘丹王麟琨
Owner INSTR TECH & ECONOMY INST P R CHINA
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