An inorganic-organic/inorganic hybrid double-layer nano-film memristor simulating neural synapses and its preparation method

Abstract

The invention discloses an inorganic-organic / inorganic hybrid double-layer nano-film memristor simulating neural synapses, which belongs to the intersection field of semiconductor microelectronic devices and artificial intelligence, and is prepared by using molecular layer deposition and atomic layer deposition technology at low temperature An inorganic-organic / inorganic hybrid double-layer nano-thin film memristor with a good bionic function of simulating nerve synapses, the molecular layer deposition and atomic layer deposition technologies used are compatible with microelectronics processes and suitable for large-scale integration. The memristor of the present invention comprises a substrate, a bottom electrode, a memristive functional layer, and a top electrode from bottom to top; It is composed of nano-stack structure thin film material.

Description

technical field [0001] The invention belongs to the intersection field of semiconductor microelectronic devices and artificial intelligence, and in particular relates to an inorganic-organic / inorganic hybrid double-layer nanometer film memristor simulating neural synapses and a preparation method thereof. Background technique [0002] Memristor is the fourth passive circuit device after resistors, capacitors, and inductors. In 1971, when Chinese scientist Professor Cai Shaotang studied the relationship between voltage, current, charge, and magnetic flux, according to the integrity of the mathematical logic relationship propose. The resistance of a memristor can change with voltage, and it can remember the changed state, that is, the resistance value at a certain moment is related to the current flowing through the device. This feature is very similar to the working principle of synapses in organisms. The connection strength between synapses changes with the stimulation of e...

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Problems solved by technology

[0003] In previous studies, most of the memristive functional layers were made of inorganic materials, and a small amount of organic memristive materials were involved. For inorganic-organic hybrid materials, their application in new neuromorphic devices can make use of the excellent photoelectric properties of inorganic materials. characteristics, and can combine the diversity of organic species (functional groups) and easy processing characteristics to take advantage of the hybridization of the two, open up new ideas for the selection of memristor materials, and provide a broader prospect for the application of memristors, but The report of inorganic-organic hybrid material system in memristor is still very rare, especially for the realization of synapse-like bionic function, which has not been reported so far.

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