Zirconium alloy shell and its preparation method, zirconium alloy component
A zirconium alloy and cladding technology, applied in the field of materials, can solve problems such as temperature rise of zirconium alloy cladding tube, rupture of zirconium alloy cladding tube, nuclear leakage, etc., so as to improve the anti-oxidation performance, improve the fault tolerance performance of accidents, and improve the anti-oxidation performance. The effect of water vapor oxidation properties
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[0042] The present invention also provides a method for preparing a zirconium alloy cladding, comprising the following steps:
[0043] S1, providing zirconium alloy substrate;
[0044] S2, forming a transition layer on the surface of the zirconium alloy substrate;
[0045] S3, forming a MAX phase layer on the surface of the transition layer;
[0046] S4, forming a sealing layer on the surface of the MAX phase layer to obtain a zirconium alloy cladding, wherein the sealing layer is a hard coating.
[0047] In step S1, it also includes removing oxides on the surface of the zirconium alloy substrate. For example, the zirconium alloy substrate is ultrasonically cleaned in alcohol and suspended on a base frame in a vacuum coating chamber, and etched with an Ar ion beam to remove oxides on the surface of the zirconium alloy substrate.
[0048] Specifically, the flow rate of argon gas introduced is 25 standard ml / min to 40 standard ml / min, the linear anode ion source current is se...
Embodiment 1
[0063] The zirconium alloy substrate was ultrasonically cleaned in alcohol, then suspended on the base frame in the vacuum coating chamber, and etched with Ar ion beams to remove oxides on the surface of the zirconium alloy substrate. Wherein, the flow rate of argon gas introduced is 35 standard ml / min, the linear anode ion source current is set to 0.2A, the bias voltage applied on the zirconium alloy substrate is -300V, and the etching time is 40min.
[0064] The TiC layer is deposited on the surface of the zirconium alloy substrate by means of an arc ion plating method, wherein the arc target is a titanium target, the reaction gas is methane, and the pedestal rotates at a position facing the arc target during the deposition process. The current of the arc target is 60A, the bias voltage applied on the zirconium alloy substrate is -100V, the flow rate of argon gas is 200 standard ml / min, the flow rate of methane is 50 standard ml / min, the pressure of the control chamber is 30m...
Embodiment 2
[0076] The zirconium alloy substrate was ultrasonically cleaned in alcohol, then suspended on the base frame in the vacuum coating chamber, and etched with Ar ion beams to remove oxides on the surface of the zirconium alloy substrate. Wherein, the flow rate of argon gas introduced is 25 standard ml / min, the linear anode ion source current is set to 0.1A, the bias voltage applied on the zirconium alloy substrate is -350V, and the etching time is 60min.
[0077] The TiC layer is deposited on the surface of the zirconium alloy substrate by means of an arc ion plating method, wherein the arc target is a titanium target, the reaction gas is methane, and the pedestal rotates at a position facing the arc target during the deposition process. The current of the arc target is 55A, the flow rate of argon gas is 200 standard ml / min, the bias voltage applied on the zirconium alloy substrate is -150V, the flow rate of methane is 50 standard ml / min, the pressure of the control chamber is 30m...
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