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Construction method of antimony tellurium selenium matrix alloy for thermoelectric material and antimony tellurium selenium-based thermoelectric material

A technology of thermoelectric materials and matrix alloys, applied in the direction of thermoelectric device lead-out wire materials, thermoelectric device manufacturing/processing, etc., can solve the problems of incapable of mass industrial production and high preparation costs, and achieve the effect of low cost and excellent performance

Active Publication Date: 2019-04-23
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the high preparation cost of the smelting-milling-sintering molding (SPS or HP) method, it cannot be mass-produced industrially and has been stuck in the laboratory research stage.

Method used

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  • Construction method of antimony tellurium selenium matrix alloy for thermoelectric material and antimony tellurium selenium-based thermoelectric material
  • Construction method of antimony tellurium selenium matrix alloy for thermoelectric material and antimony tellurium selenium-based thermoelectric material
  • Construction method of antimony tellurium selenium matrix alloy for thermoelectric material and antimony tellurium selenium-based thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] (1) Pulverize Sb blocks, Te blocks and Se blocks with a commercial purity of 5N;

[0055] (2) Pour dilute nitric acid solution into a quartz tube with an inner diameter of about 12mm sealed at one end, ultrasonically clean it for 15-20 minutes, then wash it twice with water and once with absolute ethanol, and then put the quartz tube in an oven at 100°C Dry for 8 hours;

[0056] (3) According to the chemical formula Sb 2 Te 3-x Se x The stoichiometric ratio of each element in the step (1) is taken by weighing a total of 80g of raw materials, and put into a dried quartz tube, wherein x=1.5, 1.8, 1.9, 2.0, 2.1, 2.4, 2.7;

[0057] (4) the vacuum degree of quartz tube in step (3) is pumped to 10 -3 Pa, and seal the other end of the quartz tube with an oxyhydrogen flame;

[0058] (5) Melting the quartz tube in step (4) in a rotary melting furnace at 800°C for 10 hours, rotating continuously during the melting process to ensure sufficient mixing of raw materials, cooling...

Embodiment 2

[0067] Such as figure 2 As shown, the preparation method of antimony tellurium selenide based thermoelectric material is as follows:

[0068] (1) Pulverize Sb blocks, Ag blocks, Te blocks and Se blocks with a commercial purity of 5N;

[0069] (2) Pour dilute nitric acid solution into a quartz tube with an inner diameter of about 12mm sealed at one end, ultrasonically clean it for 15-20 minutes, then wash it twice with water and once with absolute ethanol, and then put the quartz tube in an oven at 100°C Dry for 8 hours;

[0070] (3) Add the dopant Ag, according to the chemical formula Sb2-y Ag y TeSe 2 The stoichiometric ratio of each element in the step (1) takes by weighing 80g of raw materials altogether, puts in the quartz tube after drying, wherein y=0.005~0.03;

[0071] (4) the vacuum degree of quartz tube in step (3) is pumped to 10 -3 Pa, and seal the other end of the quartz tube with an oxyhydrogen flame;

[0072] (5) Melting the quartz tube in step (4) in a ro...

Embodiment 3

[0077] (1) Pulverize Sb lumps, Ag lumps, Pb lumps, Cu lumps, Te lumps and Se lumps with a commercial purity of 5N;

[0078] (2) Pour dilute nitric acid solution into a quartz tube with an inner diameter of about 12mm sealed at one end, ultrasonically clean it for 15-20 minutes, then wash it twice with water and once with absolute ethanol, and then put the quartz tube in an oven at 100°C Dry for 8 hours;

[0079] (3) Add dopant Ag block, Pb block, Cu block, according to the chemical formula Sb 1.98-z Ag 0.02 Cu z TeSe 2 , Sb 1.98- m Ag 0.02 Pb m TeSe 2 The stoichiometric ratio of each element in the step (1) takes by weighing 80g of raw materials altogether, puts in the quartz tube after drying, wherein z=0.005~0.015, m=0.005~0.015;

[0080] (4) the vacuum degree of quartz tube in step (3) is pumped to 10 -3 Pa, and seal the other end of the quartz tube with an oxyhydrogen flame;

[0081] (5) Melting the quartz tube in step (4) in a rotary melting furnace at 800°C fo...

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Abstract

The invention discloses a construction method of an antimony tellurium selenium matrix alloy for a thermoelectric material. The construction method comprises the following steps: constructing a matrixalloy with the chemical formula thereof to be Sb2Te3-xSex, wherein x is larger than or equal to 0 and smaller than or equal to 3; calculating the energy band structure of the matrix alloy according to a first principle, selecting the matrix alloy with the highest degeneracy degree through the energy band structure, wherein the corresponding chemical formula of the selected matrix alloy is Sb2Te3-x'Sex', and x' is larger than or equal to 0 and smaller than or equal to 3; preparing Sb2Te3-x''Sex'' by adopting the zone melting method, wherein x'-0.5<=x''<=x'+0.7; testing the thermoelectric property of the prepared matrix alloy with the chemical formula thereof to be Sb2Te3-x''Sex'' and further determining the matrix alloy with the highest degeneracy as the matrix alloy for preparing the antimony tellurium selenium-based thermoelectric material. The invention further discloses an antimony tellurium selenium-based thermoelectric material, which comprises a matrix alloy Sb2TeSe2 and an admixture M. M is selected from one or a combination of at least two of Ag, Cu, Sn and Pb. The antimony-tellurium-selenium-based thermoelectric material is represented by Sb2-yMyTeSe2, wherein y is largerthan or equal to 0.8 and smaller than or equal to 1.965. According to the antimony tellurium selenium-based thermoelectric material provided by the invention, the optimal value of the thermoelectricmerit figure of the material is at least 0.4 with the temperature range of 500-800K. Therefore, the thermoelectric merit figure of the material is at least increased by 100% compared with that of antimony-tellurium-selenium matrix alloy.

Description

technical field [0001] The invention belongs to the field of semiconductor thermoelectric materials, and in particular relates to a construction method of an antimony tellurium selenium matrix alloy used for thermoelectric materials and an antimony tellurium selenide based thermoelectric material. Background technique [0002] With the rapid development of world technology and economy, the global energy demand continues to increase. Solving the contradiction between energy supply and demand to achieve sustainable development is the development direction of human society at this stage. Thermoelectric materials realize the mutual conversion between thermal energy and electrical energy through the transport and interaction of carriers and phonons. Devices made of thermoelectric materials have outstanding advantages such as small size, no noise, no pollution, and simple structure, and have important application prospects in thermoelectric refrigeration and waste heat power gene...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/18H01L35/34
CPCH10N10/852H10N10/853H10N10/01
Inventor 朱铁军李贝贝翟仁爽赵新兵吴勇军
Owner ZHEJIANG UNIV
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