Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Target material manufacturing method

A manufacturing method and target material technology, which is applied in the direction of manufacturing tools, metal rolling, metal rolling, etc., can solve the problems that the sputtering performance of the target material needs to be improved, and achieve the effect of small stress accumulation and moderate deformation rate of upsetting thickness

Inactive Publication Date: 2019-04-23
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the sputtering performance of existing targets needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Target material manufacturing method
  • Target material manufacturing method
  • Target material manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] It can be seen from the background art that the sputtering performance of existing targets needs to be improved.

[0032] Now combine with a target manufacturing method for analysis. The target manufacturing method is as follows: providing a forged tantalum target, the forged tantalum target including a sputtering surface; rolling the forged tantalum target by using a rolling process, so that the forged tantalum target is vertical to the The rolling thickness deformation rate in the direction of the sputtering surface is 80% to 90%, forming a finished tantalum target.

[0033] The finished tantalum target produced by the above method has poor sputtering performance.

[0034] The rolling thickness deformation rate of the forged tantalum target is large, and the direction of the forged tantalum target subjected to the rolling force is mainly perpendicular to the sputtering surface, so that the stress accumulation in the forged tantalum target perpendicular to the sputter...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a target material manufacturing method which comprises the steps of providing a forge piece target material, wherein the forge piece target material comprises a sputtering surface; and adopting a calendaring process for calendaring the forge piece target material, enabling the calendaring thickness deformation rate of the forge piece target material in the direction perpendicular to the sputtering surface to be 40 percent to 60 percent, and forming a finished product target material, wherein the calendaring thickness deformation rate is a ratio between the thickness variation amount before and after calendaring and the thickness before calendaring. If the calendaring thickness deformation rate is small, the stress accumulation, along the direction perpendicular tothe sputtering surface, in the forge piece target material is small, so that (111) texture aggregation cannot be easily produced in the forge piece target material, the number of the (111) textures can be reduced, the sputtering rate of the formed finished product target material is improved, and the sputtering performance of the finished product target material is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a target. Background technique [0002] Sputtering coating is one of the processes for preparing thin films by physical vapor deposition. Specifically, it refers to the use of high-energy particles to bombard the surface of the target, so that the atoms or molecules of the target obtain enough energy to escape and deposit on the surface of the substrate or workpiece, thereby forming film. [0003] In order to improve production efficiency, sputter coating often requires large-size targets. The traditional process produces large-size sputtering targets for 300mm silicon wafers, and the diameter of the sputtering surface of the original target is generally less than 200mm. After the original target is processed by mechanical processing and heat treatment, it is transformed into a finished target for sputtering coating. [0004] Befo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/34B21B37/16B21J5/08B21J5/06
CPCB21B37/16B21J5/06B21J5/08C23C14/3414
Inventor 姚力军潘杰王学泽刘宁袁海军
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com