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Multilayer piezoelectric substrate provided with beryllium aluminum alloy film and preparation method thereof

A beryllium-aluminum alloy and piezoelectric substrate technology, which is applied in the field of filter substrate preparation, can solve the problems of easy disconnection or short circuit at electrodes, easy failure of devices, etc.

Active Publication Date: 2019-04-19
BEIFANG UNIV OF NATITIES
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  • Abstract
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Problems solved by technology

However, under the action of high current, due to the migration effect of aluminum atoms, the electrode is easy to break or short circuit, and the high temperature brought by high power to the surface of the substrate makes the device easy to fail.

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  • Multilayer piezoelectric substrate provided with beryllium aluminum alloy film and preparation method thereof
  • Multilayer piezoelectric substrate provided with beryllium aluminum alloy film and preparation method thereof
  • Multilayer piezoelectric substrate provided with beryllium aluminum alloy film and preparation method thereof

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Embodiment Construction

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the accompanying drawings that need to be used in the embodiments. Obviously, the accompanying drawings in the following description are some embodiments of the present invention. Ordinary technicians can also obtain other drawings based on these drawings on the premise of not paying creative work.

[0016] see figure 1 , figure 2 An embodiment of the present invention provides a multilayer piezoelectric substrate 100 provided with a beryllium aluminum alloy film. In one embodiment, it includes a piezoelectric base layer 10 and a conductive layer 30 arranged in sequence, and the conductive layer 30 is Beryllium aluminum alloy film.

[0017] see figure 1 , image 3 , In another embodiment, the interdigital transducer includes a piezoelectric base layer 10, a transition layer 20, and a conductive layer 30 arranged in sequence, ...

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Abstract

The invention provides a multilayer piezoelectric substrate provided with a beryllium aluminum alloy film, comprising a piezoelectric substrate layer and a conductive layer which are sequentially arranged, wherein the conductive layer is a beryllium aluminum alloy film. According to the multilayer piezoelectric substrate in the invention, beryllium aluminum alloy is adopted as a sputtering film, beryllium is a hexagonal crystal system and is easy to combine with the piezoelectric substrate layer with the same lattice structure, aluminum in the alloy can serve as a sound transmission material,thereby improving the sound transmission efficiency, so that the problem of poor bonding due to the fact that the lattice structures are different between the aluminum film and the piezoelectric substrate is solved by utilizing beryllium; moreover, both the alloy film and the aluminum film are metal films, and the alloy film and the aluminum film are combined by means of metal bonding, so that thebonding state is good, and the films are not easy to fall off.

Description

technical field [0001] The invention relates to the technical field of substrate preparation for filters, in particular to a multilayer piezoelectric substrate provided with a beryllium aluminum alloy film and a preparation method thereof. Background technique [0002] In surface acoustic wave devices, aluminum film is the most suitable material for producing surface acoustic waves because of its relatively low acoustic resistance. However, during the growth process of the aluminum film, due to the lattice mismatch with the substrate piezoelectric material, the lattice of the grown aluminum film is strictly distorted, and the stress of the aluminum film is relatively large. Under the action, it is easy to cause the electrode to fall off due to the separation of the aluminum film from the base material. [0003] In cellular wireless applications of surface acoustic wave filters, devices are required to withstand transmit or receive powers as large as 1W. However, under the ...

Claims

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Application Information

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IPC IPC(8): H03H9/02H03H9/145H03H3/02
CPCH03H3/02H03H9/02574H03H9/14564H03H2003/023
Inventor 肖学峰张学锋雷顺京张欢韦海成
Owner BEIFANG UNIV OF NATITIES
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