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A gallium nitride-based light-emitting diode epitaxial wafer, chip and preparation method thereof

A light-emitting diode, gallium nitride-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of heavy doping of the contact layer, bound carrier movement, high defect density, etc., to achieve improved light efficiency, good ohm Contact, improve the effect of current congestion

Active Publication Date: 2021-03-05
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology

[0007] The embodiment of the present invention provides a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof, which can solve the problem of high defect density caused by heavy doping of the contact layer in the prior art and the movement of bound carriers

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  • A gallium nitride-based light-emitting diode epitaxial wafer, chip and preparation method thereof
  • A gallium nitride-based light-emitting diode epitaxial wafer, chip and preparation method thereof
  • A gallium nitride-based light-emitting diode epitaxial wafer, chip and preparation method thereof

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Embodiment Construction

[0035] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0036] An embodiment of the present invention provides a GaN-based light-emitting diode epitaxial wafer. figure 1 A schematic structural diagram of a gallium nitride-based light-emitting diode epitaxial wafer provided by an embodiment of the present invention. see figure 1 , the GaN-based light-emitting diode epitaxial wafer includes a substrate 10, an N-type semiconductor layer 20, an active layer 30, a P-type semiconductor layer 40, and a contact layer 50, and the N-type semiconductor layer 20, the active layer 30, and the P-type semiconductor layer Layer 40 and contact layer 50 are sequentially stacked on substrate 10 .

[0037] figure 2 Schematic diagram of the structure of the contact layer provided by the embodiment of the pr...

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Abstract

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer, a chip and a preparation method thereof, belonging to the technical field of semiconductors. The gallium nitride-based light-emitting diode epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, and a contact layer, and the N-type semiconductor layer, the active layer, and the P-type semiconductor layer and the contact layer are sequentially stacked on the substrate; the contact layer includes a first sublayer and a second sublayer stacked in sequence, and the first sublayer is a P-type doped GaN layer or an N-type doped GaN layer. doped GaN layer, the second sublayer is Bi 2 o 2 Se film. The present invention adopts P-type doped GaN layer or N-type doped GaN layer and Bi 2 o 2 The Se thin films are stacked to form a contact layer, and the Bi 2 o 2 The mobility of carriers in the Se thin film is very high, which can effectively improve the charge expansion ability of the contact layer and improve the current congestion caused by poor crystal growth quality.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer, a chip and a preparation method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. Gallium nitride (GaN) has good thermal conductivity, and has excellent characteristics such as high temperature resistance, acid and alkali resistance, and high hardness, so that gallium nitride (GaN)-based LEDs have received more and more attention and research. [0003] Epitaxial wafers are the primary products in the LED manufacturing process. The existing LED epitaxial wafer includes a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer, and the N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14H01L33/32H01L33/00H01L33/40
CPCH01L33/0075H01L33/14H01L33/325H01L33/40H01L2933/0016
Inventor 郭炳磊王群葛永晖吕蒙普胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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