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Miniaturized high-gain low-illuminance night-vision imaging device

A night-vision imaging and low-gain technology, applied in the field of photoelectric imaging devices, can solve the problems of large size, inapplicability to military helmet night vision systems, and heavy weight

Active Publication Date: 2019-03-29
NORTH NIGHT VISION TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the gain is only about 200 times. Due to the use of multiple electrodes and magnetic field generators, the volume and weight are large, and it is difficult to miniaturize the whole machine. Therefore, it is not suitable for military helmet night vision systems and can only be used for Detection of general weak light signals

Method used

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  • Miniaturized high-gain low-illuminance night-vision imaging device

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Embodiment Construction

[0015] refer to image 3 , the main technical solution of the present invention is described: the present invention comprises input window 1, photocathode 2, shell 3, CMOS image sensor 4, readout circuit 5, microchannel plate 8, getter 9, flange plate 10, Ni , Cr metal film layer 11, ceramic substrate 12, the concrete structure is, A, the first metal ring 3a of the input end of the tube shell 3 and the input window 1 are sealed and welded by low-temperature indium-tin alloy solder, and the fifth metal ring 3i at the end of the tube shell 3 The flange plate 10 of the CMOS image sensor 4 signal output terminal assembly is laser sealed and welded, so that the input window 1, the tube shell 3, and the signal output terminal form a closed tubular body; B, wherein the photocathode 2 is plated on the input window In the central effective area of ​​the inner surface, the photocathode 2 is connected to the Ni and Cr metal film layer 11 on the edge of the input window; C, the microchann...

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Abstract

The invention discloses a miniaturized high-gain low-illuminance night-vision imaging device for similar night vision products for the military helmet night-vision device and related industry. The main technical scheme is as follows: a tube shell input end is hermetically sealed with an input window, a tube shell tail end is hermetically welded with an output end of a CMOS image sensor, a photoelectric cathode is plated in a surface effective area in the input window; a micro-channel plate is mounted between a second metal ring and a third metal ring of the tube shell; the CMOS image sensor iswelded with a ceramic substrate, and the output end of the CMOS image sensor is connected with a readout circuit board. A test result shows that the phenomenon that the original device is low in gainis overcome thoroughly, and the demands of effectively improving the device gain, realizing the miniaturization and being suitable for the military helmet night-vision device and like night-vision product for single use are reached.

Description

technical field [0001] The invention relates to a photoelectric imaging device, in particular to a low-illuminance night vision imaging device for miniaturized high-gain electron bombardment CMOS image sensors, mainly used for military helmet night vision devices and similar night vision products used in related industries. Background technique [0002] With the development of CMOS image sensor technology, electron bombardment CMOS image sensor (hereinafter referred to as electron bombardment CMOS low-light night vision imaging device) as a new type of low-light imaging device has played an important role in safety supervision, medicine, scientific research and other fields. application. In the military night vision equipment represented by helmet night vision products, in order to meet the needs of individual soldiers for night combat, marching and observation, it is necessary to have better imaging performance under low illumination conditions, and to be small in size, lig...

Claims

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Application Information

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IPC IPC(8): H04N5/374
CPCH04N25/76
Inventor 张昆林靳英坤谭何盛杨文波苏德坦朱锦文李晓露
Owner NORTH NIGHT VISION TECH
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