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A preparation method of sulfide heterojunction material resistant to light corrosion in photo-Fenton reaction

A technology for anti-light corrosion and sulfide, which is applied in chemical instruments and methods, chemical/physical processes, catalyst protection, etc., and can solve problems such as hidden dangers of instability and aggravated sulfide corrosion

Active Publication Date: 2019-12-24
HARBIN UNIV OF SCI & TECH
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Problems solved by technology

However, the photocorrosion of sulfide itself makes it unstable during long-term use, especially in the strong oxidative photo-Fenton reaction induced by hydrogen peroxide, which may intensify the corrosion of sulfide

Method used

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  • A preparation method of sulfide heterojunction material resistant to light corrosion in photo-Fenton reaction
  • A preparation method of sulfide heterojunction material resistant to light corrosion in photo-Fenton reaction
  • A preparation method of sulfide heterojunction material resistant to light corrosion in photo-Fenton reaction

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Embodiment 1

[0022] Embodiment 1: the α-Fe used in this embodiment 2 o 3 Nanoparticles were prepared as follows: 5 mmol FeCl 3 ·6H 2 O was dissolved in 20 mL of absolute ethanol, and after ultrasonic vibration for 30 min, 3.4 mL of deionized water and 5 mmol of sodium acetate were successively added, vigorously stirred at 300 rpm for 1 h, then hydrothermally reacted at 200 °C for 24 h, and cooled to room temperature after the reaction was completed. The solid was taken out, washed 3 times with absolute ethanol and 3 times with deionized water, kept in a vacuum oven at 60°C for 10 hours, and then taken out for use.

[0023] In this implementation, a preparation method of a sulfide heterojunction material resistant to light corrosion in the photo-Fenton reaction is completed through the following steps:

[0024] Step 1, 0.25mmol, 0.375mmol, 0.5mmol, 0.75mmolα-Fe 2 o 3 Nanoparticles were added to 40mL deionized water, stirred at 300rpm, and then 1.5mmolNa 2 MoO 4 2H 2 O and 9 mmol CH ...

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Abstract

A method for preparing a sulfide heterojunction material that is resistant to photocorrosion in the photo-Fenton reaction, and belongs to the field of photochemical energy conversion and photocatalytic degradation. The present invention aims to solve the technical problem that the corrosion of sulfide may be aggravated in the strongly oxidizing photo-Fenton reaction induced by hydrogen peroxide. Method of the present invention: 1. Combine α-Fe 2 O 3 Add the nanoparticles to deionized water, stir, and then add Na 2 MoO 4 ·2H 2 O and CH 4 N 2 S, ultrasonic shock, heat up and then keep warm, wash 3 times with absolute ethanol and 3 times with ionized water, and dry to obtain Fe 2 O 3 / MoS 2 ; 2. Convert the Fe obtained in step 1 2 O 3 / MoS 2 Disperse in the mixed solution, vibrate with ultrasound, and then stir at room temperature to completely hydrolyze TEOS. Take the precipitate and dry it in a vacuum to obtain a sulfide heterojunction material. The invention is used in the fields of photochemical energy conversion and photocatalytic degradation.

Description

technical field [0001] The invention belongs to the fields of photochemical energy conversion and photocatalytic degradation. Background technique [0002] Since the discovery of the Honda-Fujishima effect, photocatalytic technology has received great attention from the scientific community [1] . Photocatalytic technology centered on semiconductor materials can use solar energy as a light source to drive chemical reactions at room temperature. In the water environment, the electrons and holes induced by light interact with the adsorbed dissolved oxygen and water molecules to generate strong oxidizing hydroxyl radicals (OH) and superoxide ion radicals (O 2 - ), this type of active group has the ability to non-selectively oxidize and degrade organic pollutants. Different from the existing methods of treating pollutants and purifying air, photocatalytic degradation is a thermodynamic spontaneous behavior (ΔG<0), which has the characteristics of low cost, thorough treatme...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/051B01J35/02B01J33/00B01J35/00
CPCB01J27/051B01J33/00B01J35/00B01J35/30B01J35/39
Inventor 王姝杨文龙姜久兴赵波张光宇贺训军
Owner HARBIN UNIV OF SCI & TECH
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