Semiconductor device and formation method thereof
A semiconductor and device technology, which is applied in the field of semiconductor devices and their formation, can solve the problems of performance improvement and achieve the effect of small shape change and cost reduction
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[0031] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.
[0032] Figure 1 to Figure 2 It is a structural schematic diagram of a self-aligned etching process of a semiconductor device.
[0033] refer to figure 1 , provide a substrate 100, the substrate 100 includes a first region M and a second region N adjacent to the first region M; a gate structure and a dielectric layer 120 covering the gate structure are formed on the first region M of the substrate 100, the gate structure It includes a gate structure body 110 and a protective layer 112 located on the sidewall and top surface of the gate structure body 110 , and the dielectric layer 120 is also located on the second region N of the substrate 100 .
[0034] refer to figure 2 , forming a mask layer (not shown) on the dielectric layer 120 in the second region N; using the mask layer as a mask to etch and remove the dielectric layer 120 in the first region M, and forming ...
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