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Raised electrode to reduce dark current

A source electrode, drain electrode technology, applied in the direction of circuits, diodes, electrical components, etc., can solve the problems of semiconductor lattice damage, image distortion, etc.

Active Publication Date: 2019-03-01
OMNIVISION TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dark current can cause image distortion due to unwanted charge buildup in the image sensor
Many dark current sources exist in image sensors, but have a significant impact on semiconductor lattice damage during the formation of isolation trenches

Method used

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  • Raised electrode to reduce dark current
  • Raised electrode to reduce dark current
  • Raised electrode to reduce dark current

Examples

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Embodiment Construction

[0014] An example of an apparatus and method involving raised electrodes to reduce dark current is described herein. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the described examples. One skilled in the art will recognize, however, that the techniques described herein can be practiced without one or more of the specific details, or with other methods, components, materials, and the like. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.

[0015] Reference throughout this specification to "one example" or "one embodiment" means that a particular feature, structure, or characteristic described in connection with the example is included in at least one example of the present invention. Thus, appearances of the phrase "in one instance" or "in one embodiment" in various places throughout this specification are not nec...

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Abstract

The invention relates to a raised electrode to reduce dark current. An image sensor includes a plurality of photodiodes and a floating diffusion disposed in a semiconductor material. The image sensoralso includes a plurality of transfer gates coupled between the plurality of photodiodes and the floating diffusion to transfer the image charge generated in the plurality of photodiodes into the floating diffusion. Peripheral circuitry is disposed proximate to the plurality of photodiodes and coupled to receive the image charge from the plurality of photodiodes. A shallow trench isolation structure is laterally disposed, at least in part, between the plurality of photodiodes and the peripheral circuitry to prevent electrical crosstalk between the plurality of photodiodes and the peripheral circuitry. The peripheral circuitry includes one or more transistors including a source electrode and a drain electrode that are raised above a surface of the semiconductor material.

Description

technical field [0001] The present invention relates generally to semiconductor fabrication, and in particular, but not exclusively, to CMOS image sensors. Background technique [0002] Image sensors have become ubiquitous. They are widely used in digital still cameras, cellular phones, security cameras, as well as in medical, automotive and other applications. The technology used to manufacture image sensors continues to advance at a rapid rate. For example, demands for higher resolution and lower power consumption have driven further miniaturization and integration of these devices. [0003] A typical image sensor operates as follows. Image light from an external scene is incident on the image sensor. An image sensor includes a plurality of photosensitive elements such that each photosensitive element absorbs a portion of incident image light. Photosensitive elements (such as photodiodes) included in an image sensor each generate image charges when absorbing image lig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14612H01L27/1463H01L27/14643H01L27/1461H01L27/14636H01L27/14689H01L21/02532H01L21/30604H01L21/31111H01L21/3215H01L29/41783
Inventor 王勤比尔·潘胡信中陈刚
Owner OMNIVISION TECH INC
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