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A method for preparing large-area high-quality graphene

A graphene, high-quality technology, applied in the field of functional thin film material preparation, can solve the problems of low growth rate of graphene, increase of uncontrollable growth process, difficulty in large-scale preparation of high-quality graphene, etc., to achieve nucleation and growth process Controllable, realize the effect of industrialized preparation and rapid preparation

Active Publication Date: 2021-12-31
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the spontaneous nucleation characteristic of graphene is still not got rid of during the nucleation and growth process of graphene, which leads to the increase of uncontrollability of the growth process, and the growth rate of graphene is low due to the use of low-concentration precursor atmosphere , making it difficult for these beneficial measures to be used in the large-scale preparation of high-quality graphene in large areas

Method used

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  • A method for preparing large-area high-quality graphene
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  • A method for preparing large-area high-quality graphene

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Embodiment 1

[0029] A method for preparing large-area high-quality graphene (preparing large-area high-quality graphene on a 25 μm thick copper foil substrate), comprising the following steps:

[0030] 1) Place the metal copper foil substrate. First, place the quartz plate 2 in the heating zone of the quartz tube 1 of the chemical vapor deposition system; 2, and connected to the transmission nickel wire 3 of the transmission system through the round hole 5; again, the 25 μm thick copper foil substrate 6 is placed flat on the nickel foil 7, and the tip of the copper foil substrate 6 is in the same direction as the air inlet ; Then place the light-shielding plate nickel foil 4 on the left end 1 / 5 of the quartz plate 2 to form a shielding area; finally, seal the growth chamber;

[0031] 2) Turn on the vacuum pump and pump the pressure in the growth chamber to below 0.01Pa;

[0032] 3) Infuse 2.5 sccm of high-purity hydrogen with a pressure of 0.5 Pa, turn on the heating power, and heat the g...

Embodiment 2

[0043] A method for preparing large-area high-quality graphene (preparation of large-area high-quality graphene on a 25 μm thick surface copper oxide foil substrate)

[0044] 1) Place the surface oxide copper foil substrate, at first, place the quartz plate 2 on the heating zone of the quartz tube 1 of the CVD system; then, place the nickel foil 7 with a round hole at one end on the quartz plate 2, and pass The round hole 5 is connected to the transmission nickel wire 3 of the transmission system; again, the surface oxide copper foil substrate 6 with a thickness of 25 μm is placed flat on the nickel foil 7, and the tip of the surface oxide copper foil substrate 6 is in the same direction as the air inlet; Then place the light-shielding nickel foil 4 on the left end 1 / 5 of the quartz plate 2; finally, seal the growth chamber;

[0045] 2) Turn on the vacuum pump and pump the pressure in the CVD growth chamber to 0.04Pa;

[0046] 3) Pass into the high-purity H of 250sccm 2 , th...

Embodiment 3

[0054] A method for preparing large-area high-quality graphene (preparation of large-area high-quality graphene on a 25 μm thick surface copper oxide foil substrate)

[0055] 1) Place the surface oxide copper foil substrate. First, place the quartz plate 2 in the heating zone of the quartz tube 1 of the CVD system; , and connected to the transmission nickel wire 3 of the transmission system through the round hole 5; again, the 25 μm thick surface oxide copper foil substrate 6 is placed flat on the nickel foil 7, wherein the tip of the surface oxide copper foil substrate 6 is connected to the air inlet The direction is the same; then the light-shielding nickel foil 4 is placed on the left end 1 / 5 of the quartz plate 2; finally, the growth chamber is sealed;

[0056] 2) Turn on the vacuum pump and pump the pressure in the CVD growth chamber to 0.04Pa;

[0057] 3) Introduce high-purity hydrogen with a flow rate of 500 sccm and a pressure of 10 5 Pa, and turn on the heating powe...

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Abstract

A method for preparing large-area high-quality graphene, using light-shielding materials to create a shadow area in the high-temperature area of ​​the growth chamber, which is used to block the heat that reaches the surface of the metal substrate through thermal radiation, thereby forming a local low temperature on the metal substrate region, the activated carbon atoms form local supersaturation in the low temperature region and form graphene nuclei, and gradually grow in the shaded region. With the expansion of the graphene growth front, more active carbon atoms can be absorbed into the graphene lattice per unit time. Therefore, the concentration of the precursor can be appropriately increased during the continuous growth of graphene, thereby realizing graphene rapid preparation. By adopting the method of the present invention, not only large-area high-quality graphene can be obtained, but also the nucleation and growth process is controllable, and the growth rate is fast, which is more conducive to realizing the industrial preparation of large-area high-quality graphene, thereby promoting the application research of graphene development of.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional thin film materials, and in particular relates to a method for preparing large-area high-quality graphene. Background technique [0002] Graphene is made of sp 2 A two-dimensional crystal material with a hexagonal honeycomb structure composed of hybrid carbon atoms, with a thickness of only 0.3335nm. Since Novoselv et al first used the micromechanical exfoliation method to obtain high-quality single-layer graphene from highly oriented pyrolytic graphite (HOPG) in 2004, graphene has rapidly become a research hotspot in various fields. A series of excellent physical and chemical properties of graphene have also been discovered one after another, such as high light transmittance (~97%), high electron mobility (200000cm 2 ·V -1 ·s -1 ), long-range ballistic transport properties (up to sub-micron level), high thermal conductivity (5000w m -1 ·K -1 ), high specific surface area (...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 史永贵桑昭君王允威杨淑赵高扬
Owner XIAN UNIV OF TECH
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