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Method for preparing large-area high-quality graphene

A graphene, high-quality technology, applied in the field of functional thin film material preparation, can solve the problems of difficult large-scale preparation of high-quality graphene, increase of uncontrollable growth process, low growth rate of graphene, etc., to achieve nucleation and growth process Controllable, rapid preparation, and development-promoting effects

Active Publication Date: 2019-03-01
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the spontaneous nucleation characteristic of graphene is still not got rid of during the nucleation and growth process of graphene, which leads to the increase of uncontrollability of the growth process, and the growth rate of graphene is low due to the use of low-concentration precursor atmosphere , making it difficult for these beneficial measures to be used in the large-scale preparation of high-quality graphene in large areas

Method used

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  • Method for preparing large-area high-quality graphene
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  • Method for preparing large-area high-quality graphene

Examples

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Effect test

Embodiment 1

[0029] A method for preparing large-area high-quality graphene (preparing large-area high-quality graphene on a 25 μm thick copper foil substrate), comprising the following steps:

[0030] 1) Place the metal copper foil substrate. First, place the quartz plate 2 in the heating zone of the quartz tube 1 of the chemical vapor deposition system; 2, and connected to the transmission nickel wire 3 of the transmission system through the round hole 5; again, the 25 μm thick copper foil substrate 6 is placed flat on the nickel foil 7, and the tip of the copper foil substrate 6 is in the same direction as the air inlet ; Then place the light-shielding plate nickel foil 4 on the left end 1 / 5 of the quartz plate 2 to form a shielding area; finally, seal the growth chamber;

[0031] 2) Turn on the vacuum pump and pump the pressure in the growth chamber to below 0.01Pa;

[0032] 3) Infuse 2.5 sccm of high-purity hydrogen with a pressure of 0.5 Pa, turn on the heating power, and heat the g...

Embodiment 2

[0043] A method for preparing large-area high-quality graphene (preparation of large-area high-quality graphene on a 25 μm thick surface copper oxide foil substrate)

[0044] 1) Place the surface oxide copper foil substrate, at first, place the quartz plate 2 on the heating zone of the quartz tube 1 of the CVD system; then, place the nickel foil 7 with a round hole at one end on the quartz plate 2, and pass The round hole 5 is connected to the transmission nickel wire 3 of the transmission system; again, the surface oxide copper foil substrate 6 with a thickness of 25 μm is placed flat on the nickel foil 7, and the tip of the surface oxide copper foil substrate 6 is in the same direction as the air inlet; Then place the light-shielding nickel foil 4 on the left end 1 / 5 of the quartz plate 2; finally, seal the growth chamber;

[0045] 2) Turn on the vacuum pump and pump the pressure in the CVD growth chamber to 0.04Pa;

[0046] 3) Pass into the high-purity H of 250sccm 2 , th...

Embodiment 3

[0054] A method for preparing large-area high-quality graphene (preparation of large-area high-quality graphene on a 25 μm thick surface copper oxide foil substrate)

[0055] 1) Place the surface oxide copper foil substrate. First, place the quartz plate 2 in the heating zone of the quartz tube 1 of the CVD system; , and connected to the transmission nickel wire 3 of the transmission system through the round hole 5; again, the 25 μm thick surface oxide copper foil substrate 6 is placed flat on the nickel foil 7, wherein the tip of the surface oxide copper foil substrate 6 is connected to the air inlet The direction is the same; then the light-shielding nickel foil 4 is placed on the left end 1 / 5 of the quartz plate 2; finally, the growth chamber is sealed;

[0056] 2) Turn on the vacuum pump and pump the pressure in the CVD growth chamber to 0.04Pa;

[0057] 3) Introduce high-purity hydrogen with a flow rate of 500 sccm and a pressure of 10 5 Pa, and turn on the heating powe...

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Abstract

The invention discloses a method for preparing large-area high-quality graphene. A shadow area is created in a high-temperature area of a growth cavity through a shading material and used for shielding heat which arrives at the surface of a metal substrate through heat radiation, thus a local low-temperature area is formed on the metal substrate, so that active carbon atoms form local supersaturation in the low-temperature area and form graphene crystal nuclei, and the graphene crystal nuclei gradually grow in the shadow area. Along with expanding of the front edge of graphene, more activatedcarbon atoms can be absorbed to enter a graphene lattice within a unit time, therefore, in the continuous growth process of graphene, the concentration of a precursor can be properly increased, and thus graphene is quickly prepared. By means of the method, large-area high-quality graphene can be obtained; meanwhile, the nucleation and growth process is controllable, the growth speed is high, industrial preparation of large-area high-quality graphene is better facilitated, and thus development of application and research of graphene is promoted.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional thin film materials, and in particular relates to a method for preparing large-area high-quality graphene. Background technique [0002] Graphene is made of sp 2 A two-dimensional crystal material with a hexagonal honeycomb structure composed of hybrid carbon atoms, with a thickness of only 0.3335nm. Since Novoselv et al first used the micromechanical exfoliation method to obtain high-quality single-layer graphene from highly oriented pyrolytic graphite (HOPG) in 2004, graphene has rapidly become a research hotspot in various fields. A series of excellent physical and chemical properties of graphene have also been discovered one after another, such as high light transmittance (~97%), high electron mobility (200000cm 2 ·V -1 ·s -1 ), long-range ballistic transport properties (up to sub-micron level), high thermal conductivity (5000w m -1 ·K -1 ), high specific surface area (...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 史永贵桑昭君王允威杨淑赵高扬
Owner XIAN UNIV OF TECH
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