Micro-integrated electric field measuring sensor based on single-arm straight optical path structure

Abstract

The invention relates to a micro-integrated electric field measuring sensor based on a single-arm straight optical path structure. An input coupler, a polarizer, a single-arm straight optical path, ananalyzer, and an output coupler are prepared in the inside part using the lithium niobate crystal as a substrate and are arranged successively along the optical path direction. The input coupler is used for transforming externally inputted linearly polarized monochromatic light into parallel light beams that are emitted to the polarizer; the light beam outputted by the polarizer is decomposed into ordinary light and extraordinary light when entering the single-arm straight optical path. The single-arm straight optical path is used for transmitting the ordinary light and extraordinary light. The polarizer is used for processing the ordinary light and extraordinary light that are outputted by the single-arm straight optical path to form components along the polarization direction and carrying out re combination to form a linearly polarized light beam. The output coupler is used for converging the linearly polarized light beam from the analyzer into a point light source meeting a Bruscoangle and outputting the converged light to a single-mode fiber. A detection antenna is connected to the outside of the ithium niobate crystal corresponding to the single-arm straight optical path. Therefore, a problem of the measurement error caused by birefringence in the prior art is solved.

Description

technical field [0001] The invention relates to the technical field of electric field strength detection in areas with high potential, high field strength and danger of electric shock, in particular to a micro-integrated electric field measurement sensor based on a single-arm in-line optical path structure. Background technique [0002] In the fields of industrial transmission, transformation, and distribution, nuclear industry technology, aerospace, and other military and civilian technology fields, due to the needs of related systems, equipment operation reliability, and personnel safety protection, it is necessary to quickly and accurately realize the electric field in a specific area Measurement of intensity distribution properties. Due to the particularity of the measurement object, the relevant measurement equipment is required to have little influence on the distortion of the electric field distribution at the point to be measured, complete electrical isolation at the...

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Problems solved by technology

[0004] For the former type of contact electric field measurement method, the outstanding problem is that the electromagnetic isolation is not complete. In the high field strength or high potential area, it is difficult to fundamentally ensure the safety of equipment and personnel, and there is a hidden danger of electric shock; plus the front-end components The large geometric size is easy to cause obvious distortion of the electric field to be measured, and it is difficult to completely eliminate the distortion error by correcting and compensating the measurement results, and there is often a large systematic error; in addition, for the electric field that changes rapidly with time ( For example, transient electric fields such as discharge environment or lightning waves), in the measurement, it is often impossible to measure effectively because of its large time constant and sluggish response.

For the latter type of electric field measurement method, the outstanding problems at present are the low measurement accuracy and large measurement error, among which the residual birefringence inside the electro-optic crystal and the extremely demanding optical path processing are the main reasons for the large error

For example, the commonly used Mach-Zehnder (MZ) fiber-optic electric field sensor adopts the dual-arm principle, which requires a pair of optical arms to maintain excellent processing accuracy, and the length difference is half a wavelength. In addition, due to its measurement principle, As a result, the residual birefringence and intrinsic birefringence in crystal processing will have a significant impact on the measurement results, which limits its applicability and measurement accuracy

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