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Device and method for preparing boron-doped graphene by laser

A technology of boron doping and graphene, which is applied in the field of laser preparation of boron doped graphene devices, which can solve problems such as low conversion efficiency, unfavorable production, and harsh preparation conditions, and achieve high stability and ensure accuracy.

Active Publication Date: 2021-12-21
JIANGSU UNIV
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Problems solved by technology

However, on the one hand, the preparation process of these methods is relatively complicated, the energy consumption is too high, and the gains outweigh the losses; on the other hand, they are only limited to the laboratory, the preparation conditions are relatively harsh, and large-scale production is not possible, and the conversion efficiency is low, which is not conducive to industrial production.

Method used

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  • Device and method for preparing boron-doped graphene by laser
  • Device and method for preparing boron-doped graphene by laser
  • Device and method for preparing boron-doped graphene by laser

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Embodiment Construction

[0018] The working conditions of the method and device proposed by the present invention will be described in detail below in conjunction with the accompanying drawings, but they are not used to limit the present invention.

[0019] The device used in this embodiment to prepare boron-doped graphene, such as figure 1 and figure 2 As shown, it includes reaction vessel, laser generating system, computer control system, cleaning system and positioning tightening device. The reaction vessel 7 is divided into a reaction chamber 26 and a collection chamber 9. The reaction chamber 26 contains a mixed solution mixed with deionized water, carbon powder and boric acid in a certain proportion, and a boss 4 on which a copper foil 6 is placed. The rotor 25 of the magnetic stirrer is placed in the mixed solution, and the rotor is made of polyvinyl fluoride and magnetic steel, which is resistant to high temperature, abrasion, corrosion and strong magnetism. The reaction chamber 26 is place...

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Abstract

The invention relates to a device and method for preparing boron-doped graphene by laser, including a reaction container, a laser generating system, a computer control system, a cleaning system and a positioning tightening device. The laser light emitted by the high-power nanosecond pulse laser device expands the spot diameter through the beam expander, and then impacts the copper foil placed in the mixed suspension solution of graphite and boric acid through the focusing lens. The surface of the copper foil absorbs a large amount of laser energy in a very short time, and is limited by the surrounding graphite and boric acid mixed solution, the heat cannot be transmitted, and a high-temperature and high-pressure plasma zone is formed on the surface of the copper foil, thereby inducing graphite particles and boron in the solution The element is transformed into graphene doped with boron and deposited on copper foil. The device and method of the invention can continuously synthesize high-quality lattice-doped graphene.

Description

technical field [0001] The invention relates to a device and method for preparing boron-doped graphene by laser, which is suitable for the technical field of boron-doped graphene preparation. Background technique [0002] Since British scholars Novoselov and Geim et al. successfully obtained single-layer graphene from highly oriented pyrolytic graphite (HOPG) in 2004 by repeatedly tearing thermal peeling tape, how to prepare graphene efficiently and conveniently has been closely studied by researchers. focus on. [0003] In the field of graphene doping, adding boron source or nitrogen source to the experimental environment of synthesizing graphene can prepare boron-doped and nitrogen-doped graphene. At present, most of the preparation of doped graphene uses chemical methods for post-treatment doping after the preparation of graphene is completed. However, on the one hand, the preparation process of these methods is relatively complicated, the energy consumption is too high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
CPCC01B32/184
Inventor 任旭东马文迅马服辉钱磊王冕
Owner JIANGSU UNIV
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