Nitride semiconductor device

Abstract

Provided is a nitride semiconductor device including a substrate, a nucleation layer, a buffer layer, a channel layer, a first electrode, and a second electrode. The substrate has a first surface anda second surface opposite to the first surface. The nucleation layer, the buffer layer, the channel layer, and the barrier layer are sequentially disposed on the first surface of the substrate. The first electrode layer and the second electrode layer are disposed on the barrier layer. A first void penetrates through the substrate, the nucleation layer, the buffer layer, the channel layer, and thebarrier layer and exposes a portion of the first electrode. In the present invention, a substrate back structure including at least one hole and a metal layer is introduced into the nitride semiconductor element, the breakdown voltage can be improved, and the current collapse phenomenon can be improved. According to the design of the insulating doping region, the leakage current path can be further blocked.

Description

technical field [0001] The present invention relates to a semiconductor device, and in particular to a nitride semiconductor device. Background technique [0002] In order to enable power devices to have greater power density, faster operating frequency, and lower power loss, gallium nitride (GaN) semiconductor devices with a wide energy gap are currently the most attractive choice. However, when the epitaxial layer is grown on the silicon substrate, the number of defects in the epitaxial layer is too high due to the mismatch of crystal lattice and thermal expansion coefficient, which greatly reduces the breakdown voltage capability of the device. In addition, under the influence of different bias voltages and pulse conditions, the on-resistance of the device will change with the bias voltage conditions due to internal defects capturing or releasing electrons, resulting in a current collapse phenomenon. Contents of the invention [0003] In view of this, the present inven...

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Problems solved by technology

However, when the epitaxial layer is grown on the silicon substrate, the number of defects in the epitaxial layer is too high due to the influence of lattice and thermal expansion coefficient mismatch, which greatly reduces the breakdown voltage capability of the device.

In addition, under the influence of different bias voltage and pulse conditions, due to internal defects capturing or releasing electrons, the on-resistance of the element will change with the bias voltage conditions, resulting in a current collapse phenomenon.

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