A method for improving magnetic properties of anisotropic magnetoresistance permalloy film

Abstract

The invention relates to a method for improving magnetic properties of anisotropic magnetoresistance permalloy films, and the technical field of magnetic films. The invention adopts magnetron sputtering method to form buffer layer, NiFe magnetic film and protective layer laminated multilayer film structure on the substrate in turn, and the material of the buffer layer is TaNb alloy; After sputtering, vacuum annealing was carried out. As that traditional metal Ta is replace by TaNb alloy as a buffer lay, By improving the structure of the magnetoresistive layer, the growth of the magnetoresistive thin film can be improved, and the growth of NiFe thin film with specific (111) crystal direction can be induced at room temperature, so that the AMR value of the thin film can be increased, the coercivity of the thin film can be decreased, and the sensitivity of the thin film can be improved. Therefore, this method has great potential value for improving the performance of magnetic sensor devices.

Description

technical field [0001] The invention belongs to the field of magnetic thin films, and relates to a preparation method of a magnetic resistance thin film, in particular to a method for improving the magnetic properties of an anisotropic magnetoresistance permalloy thin film. Background technique [0002] A magnetoresistive sensor is an important part of a sensor, a device or device that accepts a magnetic signal and converts it into a usable output signal. Anisotropic magnetoresistive sensors have the advantages of low power consumption, high sensitivity, small size, low noise, high reliability, and strong resistance to harsh environments, making them account for an increasing proportion of magnetosensitive sensors. is also gradually expanding. Today's anisotropic magnetoresistive sensors have matured in terms of material composition, device structure, and peripheral circuits, which makes them the first choice for miniaturized, high-precision magnetic sensors. Due to its lo...

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Problems solved by technology

However, metal Ta as a buffer layer has defects that cannot be ignored, most mainly reflected in the interdiffusion and solid-phase reaction between the metal Ta and NiFe interface under high temperature conditions, resulting in a magnetic dead layer at the contact interface between the metal Ta and the alloy NiFe. The presence of layers can adversely affect the magnetic properties of permalloy thin films

Moreover, the high-temperature annealing treatment of the current process will further increase the thickness of the magnetic dead layer.

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