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Hydrogenated isotopically enriched boront trifluoride dopant source gas composition

A technology of boron trifluoride and composition, which is applied in the field of dopant source gas composition, and can solve problems such as ion source failure and ion beam instability

Active Publication Date: 2019-01-11
ENTEGRIS INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Loss of tungsten can therefore contribute to ion beam instability and may eventually lead to premature ion source failure

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  • Hydrogenated isotopically enriched boront trifluoride dopant source gas composition
  • Hydrogenated isotopically enriched boront trifluoride dopant source gas composition
  • Hydrogenated isotopically enriched boront trifluoride dopant source gas composition

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[0037] The following detailed description should be read with reference to the drawings in which similar components are numbered the same in different drawings. The detailed description and drawings, which are not necessarily to scale, describe illustrative embodiments and are not intended to limit the scope of the invention. The illustrative embodiments described are intended to be illustrative only. Selected features of any illustrative embodiment may be incorporated into another embodiment unless expressly stated to the contrary.

[0038] As used herein and in the appended claims, the singular forms "a," "and," and "the" include plural referents unless the context clearly dictates otherwise.

[0039] As used herein, the term "pressure regulated" in reference to a fluid storage and dispensing container means that the container has at least one pressure regulator device, set pressure valve, or vacuum / pressure activated check valve disposed within the interior volume of the c...

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Abstract

The invention relates to a hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above naturalabundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol.%, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

Description

[0001] Cross References to Related Applications [0002] This application claims U.S. Provisional Application No. 62 / 314241, filed March 28, 2016, entitled "Hydrogenated Isotopically Enriched BF3 Dopant Source Gas Composition" Interest, the contents of which are hereby incorporated by reference in their entirety for all purposes. technical field [0003] The present invention relates to a hydrogenated and enriched boron trifluoride (BF 3 ) isotope dopant source gas compositions, and related methods and apparatus. Background technique [0004] Ion implantation is used in integrated circuit fabrication to precisely introduce controlled amounts of dopant impurities into semiconductor wafers during fabrication of microelectronics / semiconductor fabrication. In such implant systems, an ion source ionizes the desired dopant element gas, and the ions are extracted from the source in the form of an ion beam with the desired energy. Extraction is achieved by applying a high voltag...

Claims

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Application Information

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IPC IPC(8): C01B35/06H01J37/08H01J37/317
CPCC01B35/061H01J37/08H01J37/3171H01J2237/006H01J37/32412H01J37/3244H01J2237/0206H01J2237/022C09D1/00
Inventor S·毕晓普S·N·叶达弗O·布莱J·斯威尼唐瀛
Owner ENTEGRIS INC
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