Thin film transistor and preparation method thereof

Abstract

A preparation method of a thin film transistor includes: forming a gate electrode a gate insulating layer on the gate electrode on a substrate in turn; depositing a first hydrogenated amorphous silicon layer on the gate insulating layer at a first rate, wherein the Si-H bond content in the first hydrogenated amorphous silicon layer is 25%-97%; depositing a second hydrogenated amorphous silicon layer on the first hydrogenated amorphous silicon layer at a second rate, wherein the Si-H bond content in the second hydrogenated amorphous silicon layer is 45%-99%, the second rate is great than the first rate, and the thickness of the second hydrogenated amorphous silicon lay is smaller than the thickness of the first hydrogenated amorphous silicon layer. As the first hydrogenate amorphous silicon layer and the second hydrogenate amorphous silicon layer are simultaneously adopted in the present application, the total Si-H bond content is reduced, the production efficiency is ensured and the performance as well as the production capacity can be improved.

Description

Technical field [0001] The invention relates to the field of display, in particular to a thin film transistor and a preparation method thereof. Background technique [0002] With the development of technology in recent years, thin-film transistor displays have gradually occupied a leading position in the display field because of their low power consumption and excellent display quality. Generally, thin film transistor displays use amorphous silicon thin film transistors as switches. Amorphous silicon thin film transistors usually have the performance of large area uniformity, large capacity, and high display quality, and are the key devices of large-size active liquid crystal display devices. [0003] However, the hydrogenated amorphous silicon layer in the amorphous silicon thin film transistor is unstable, it will absorb more energy when exposed to light, and generate more electron-hole pairs than when it is not illuminated, which will cause the threshold voltage to shift and ca...

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide a thin film transistor and a preparation method thereof for the problem of instability of the hydrogenated amorphous silicon layer in the amorphous silicon thin film transistor

Images