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Preparation method of low secondary electron yield non-evaporable getter film

A getter thin film and secondary electron technology, which is applied in ion implantation plating, vacuum evaporation plating, metal material coating process, etc., can solve the problem of high output of secondary electrons and reduction of non-evaporable getter thin film Secondary electron production and other issues, to achieve the effect of reducing secondary electron production, convenient operation, and improving air suction performance

Active Publication Date: 2018-12-25
XI AN JIAOTONG UNIV
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Problems solved by technology

[0003] The secondary electron yield of existing non-evaporable getters is generally between 1.4 and 2.5 [J.W., Yong Wang, Yanhui Xu, Yuxin Zhang, Bo Zhang, Wei Wei, Tong Zhang, RESEARCH ON LOW SECONDARYELECTRON YIELD MATERIALS FOR FUTURE ACCELERATORS, Proceedings of IPAC2016, Busan, Korea, 2016, pp.3284-3286.], the secondary electron yield is high, so it is necessary to develop a low secondary electron yield non-evaporable getter film to reduce Secondary Electron Yield of Non-Evaporable Getter Thin Films

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Embodiment Construction

[0016] The present invention is described in further detail below in conjunction with accompanying drawing:

[0017] refer to figure 1 and figure 2 , the preparation method of the low secondary electron yield non-evaporative getter thin film of the present invention comprises the following steps: carrying out laser etching on the substrate surface, making the substrate surface a zigzag groove structure, and then The non-evaporable getter film is sputtered on the surface to obtain a non-evaporable getter film with low secondary electron yield, wherein the notch width W on the substrate surface is 1-200 μm, and the notch depth D on the substrate surface is 1-190 μm, the half-angle width of the notch on the substrate surface is 10°-80°, and the surface area of ​​the substrate after laser etching is 1.1-5 times that of the substrate before laser etching.

[0018] A non-evaporable getter film is sputtered on the surface of the substrate by using a sputter coating device. During ...

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Abstract

The invention discloses a preparation method of a low secondary electron yield non-evaporable getter film. The preparation method comprises the following steps that laser etching is conducted on the surface of a substrate, and the surface of the substrate is made to be of a zigzag groove structure; and then a non-evaporable getter film is arranged on the surface of the substrate in a sputtering deposition mode, and the low secondary electron yield non-evaporable getter film is obtained. The notch width W of the surface of the substrate is 1-200 [mu]m, the notch depth D of the surface of the substrate is 1-190 [mu]m, and the half-angular width of notches in the surface of the substrate is 10-80 degrees. The non-evaporable getter film prepared through the preparation method is low in secondary electron yield and better in absorption performance.

Description

technical field [0001] The invention relates to a method for preparing a film, in particular to a method for preparing a non-evaporable getter film with a low secondary electron yield. Background technique [0002] Non-evaporable getters (Non-evaporable getters, NEG) TiZrVHf material is suitable for high-precision vacuum devices, and its application scope mainly involves scientific research, industrial and medical fields, such as particle detection, particle accelerator, MEMS (Micro Electro-Mechanical Systems) devices, radio frequency signal receiving and transmitting vacuum tubes and other products. The main function of this material is to absorb most of the residual gas in the ultra-high vacuum state, thereby further improving the vacuum degree, and at the same time inhibiting the secondary electron multiplication in the vacuum device and improving the service life of the vacuum device. For high-energy particle accelerators, coating it on the inner wall of the vacuum cham...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/02
CPCC23C14/022C23C14/34
Inventor 王洁王盛高勇杜鑫
Owner XI AN JIAOTONG UNIV
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