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Preparation method of rare earth erbium doped tungsten disulfide thin film material with controllable layers

A technology of tungsten disulfide and thin film materials, which is applied in the direction of metal material coating process, coating, ion implantation plating, etc.

Active Publication Date: 2018-12-18
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Previous doping studies of tungsten disulfide focused on transition metal ions, which can only slightly modulate the emission wavelength

Method used

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  • Preparation method of rare earth erbium doped tungsten disulfide thin film material with controllable layers
  • Preparation method of rare earth erbium doped tungsten disulfide thin film material with controllable layers

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Experimental program
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Embodiment 1

[0025] In the first step, a silicon oxide / silicon substrate of 1 square centimeter is selected, washed and dried with acetone, ethanol, and deionized water in sequence;

[0026] The second step is to place the substrate in the multi-target magnetron sputtering chamber, install high-purity erbium and tungsten metal targets, vacuumize, and heat the substrate to 100 o C;

[0027] In the third step, the magnetron sputtering cavity is filled with argon gas to 1.2 Pa, the power of the tungsten target is adjusted to 100 W, the power of the erbium target is set to 5 W, and the sputtering is performed for 10 s to form a continuous erbium-tungsten alloy film of about 1 nm;

[0028] The fourth step is to take out the erbium-tungsten alloy film and place it in the second temperature zone of the dual-temperature zone tube furnace, then place 500 mg of sulfur powder in the first temperature zone, vacuumize, and pass the carrier gas to the vacuum tube furnace to atmospheric pressure;

[002...

Embodiment 2

[0032] The first step is to select a 2 square centimeter sapphire substrate, wash and dry with acetone, ethanol, and deionized water in sequence;

[0033] The second step is to place the substrate in the multi-target magnetron sputtering chamber, install high-purity erbium and tungsten metal targets, vacuumize, and heat the substrate to 150 o C;

[0034] In the third step, the magnetron sputtering chamber is filled with argon gas to 1.2 Pa, the power of the tungsten target is adjusted to 100 W, the power of the erbium target is set to 2 W, and the sputtering is performed for 25 s to form a continuous erbium-tungsten alloy film of about 2.5 nm;

[0035] The fourth step is to take out the erbium-tungsten alloy film and place it in the second temperature zone of the dual-temperature zone tube furnace, then place 500 mg of sulfur powder in the first temperature zone, vacuumize, and pass the carrier gas to the vacuum tube furnace to atmospheric pressure;

[0036] The fifth step, t...

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Abstract

The invention relates to a preparation method of rare earth erbium doped two-dimensional layered tungsten disulfide thin film material with controllable layers. The method comprises the following steps that firstly, a substrate is washed, an alloy film of erbium and tungsten is prepared by magnetron sputtering a high purity metal target material, then the sulfur powder is placed in a first temperature zone, the deposited alloy film is placed in a second temperature zone, and a vacuum tube furnace is vacuumized; the carrier gas is fed into the vacuum tube furnace for washing, then gas is continuously fed, the first temperature zone is heated to 120-200 DEG C, the second temperature zone is heated to 700-900 DEG C, and growing is conducted for more than 10 minutes; and finally, the temperature of the first temperature zone and the second temperature zone is reduced to the room temperature, and the erbium doped two-dimensional layered tungsten disulfide thin film material is obtained. According to the preparation method, the sputtering power and time are adjusted, the two-dimensional thin films with different thickness, morphology and doping concentration can be obtained, the two-dimensional crystal thin films with wafer grade and even morphology can be obtained, the photoelectric properties are high, and the preparation method can be used for the preparation of ultra-thin opticalelectronic devices of atomic grade and used in the fields such as luminescent devices and photoelectric detectors.

Description

technical field [0001] The invention relates to the technical field of magnetron sputtering and chemical vapor deposition preparation, in particular to a method for preparing a rare earth erbium-doped tungsten disulfide film material with a controllable layer number. Background technique [0002] Two-dimensional layered materials are of great interest in realizing atomically thin electronic and optoelectronic devices. In particular, the two-dimensional semiconductor material tungsten disulfide has been intensively studied due to its excellent photoelectric properties. Two-dimensional layered tungsten disulfide is bound by in-plane covalent bonds, and the layers are stacked together by weak Van der Waals force, which has many novel physical properties. The study of luminescence characteristics from single layer to multi-layer is of great significance to the construction of atomic-level ultra-thin optoelectronic devices for communication and detection. However, the current l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/18C23C14/35C23C14/58
CPCC23C14/185C23C14/352C23C14/5866
Inventor 白功勋徐时清张军杰王焕平叶仁广
Owner CHINA JILIANG UNIV
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