Electrochemical preparation method of amorphous silicon dioxide

Abstract

The invention belongs to the technical field of inorganic materials, in particular to an electrochemical preparation method of amorphous silicon dioxide. The electrochemical preparation method comprises the following steps of using a low-cost sodium silicate solution as a silicon source, and preparing a silicon dioxide precursor by an anion membrane electrolyzing method; drying the electrolyzed silicon dioxide precursor until the solution is completely evaporated out, and grinding; centrifuging and filtering the ground silicon dioxide precursor for multiple times, adjusting the pH (potential of hydrogen) to the neutral property, removing the remaining H+ and sodium silicate, drying, and grinding, so as to obtain the amorphous silicon dioxide with high purity and no impurity phase. The electrochemical preparation method has the advantages that the influence by Na+ is eliminated, the reaction time is short, and the amorphous silicon dioxide can be prepared at one step; according to the characteristic that the silicon dioxide is not dissolved into water, the silicon dioxide is washed and ground, so that the final amorphous silicon dioxide product has high purity and no impurity phase;the technical problems of high requirement on equipment and high energy consumption in the silicon dioxide preparation process, and low purity, small output and the like of the final product are solved.

Description

[technical field] [0001] The invention belongs to the technical field of inorganic materials, in particular to an electrochemical preparation method of amorphous silicon dioxide. [Background technique] [0002] As a member of the metal acid oxide system of functional materials, silicon dioxide is widely used in important fields such as important devices in the electronics industry, optical instruments, and communication optical fibers due to its special crystal structure. Silica has good thermal insulation, high light transmittance, high hardness, good wear resistance and good dielectric properties, and is widely used in industry. For example: as a special dielectric and heat insulating material, silicon dioxide can be used in microelectronics, optoelectronics and optical integrated devices; silicon dioxide can be used in solar devices due to its high thermal resistance and strong light transmission. Such as: silicon dioxide has been used in inorganic heat insulating materi...

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Problems solved by technology

[0006] The purpose of the present invention is to solve the above-mentioned deficiencies and provide a kind of electrochemical preparation method of amorphous silicon dioxide, the reaction time of this method is short, the silicon dioxide product of final gained has high purity, no impurity, solves the problem of silicon dioxide preparation. In the process, there are technical problems such as high equipment requirements, high energy consumption, and low purity and low output of the final product.

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