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Graphene/silicon solar cell

A technology of silicon solar cells and solar cells, which is applied in the field of solar electrodes, can solve the problems of many transfer defects of single-layer graphene, small area of ​​few-layer graphene, and unsuitability for mass production, etc., and achieves the advantages of electron transmission and high conductivity. and mechanical load-bearing properties, the effect of large size

Active Publication Date: 2018-12-07
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, traditional graphene / silicon solar cells use single-layer graphene or few-layer mechanically exfoliated graphene as transparent conductive electrodes, which have the following problems. First, the thickness of graphene is low and the light absorption rate is too low; , single-layer graphene has many transfer defects and low electron mobility, which is not conducive to the transmission of photoelectrons; third, the area of ​​few-layer graphene is too small to be suitable for mass production

Method used

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  • Graphene/silicon solar cell
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  • Graphene/silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) Graphene oxide was prepared into a graphene oxide aqueous solution with a concentration of 0.5ug / mL, and a hydrophilic polytetrafluoroethylene membrane was used as a substrate to form a membrane by suction filtration.

[0027] (2) Put the graphene oxide film attached to the hydrophilic polytetrafluoroethylene film in a closed container, and fumigate from the bottom to the top for 1 hour at a high temperature of 80 degrees HI.

[0028] (3) The melted solid transfer agent camphor is uniformly coated on the surface of the reduced graphene oxide film by evaporation, casting, etc., and slowly cooled at room temperature, and the film and the substrate are separated.

[0029] (4) Slowly volatilize the solid transfer agent from the graphene film supported by the solid transfer agent obtained above at 40 degrees to obtain an independent self-supporting graphene film.

[0030] (5) Spraying a layer of metal titanium on the surface of the chemically reduced graphene film by mea...

Embodiment 2

[0036] (1) Graphene oxide was prepared into a graphene oxide aqueous solution with a concentration of 10ug / mL, and the PC film was used as the substrate to form a film by suction filtration.

[0037] (2) Put the graphene oxide film attached to the AAO film in a closed container, and fumigate from the bottom to the top at 100 degrees HI for 0.1 h.

[0038] (3) Uniformly coat the melted solid transfer agent naphthalene on the surface of the reduced graphene oxide film by evaporation, casting, etc., and slowly cool it at room temperature.

[0039] (4) Slowly volatilize the graphene film supported by the solid transfer agent obtained above at 80 to obtain an independent self-supporting graphene film.

[0040] (5) Spraying a layer of metal titanium on the surface of the chemically reduced graphene film by means of magnetron sputtering. By controlling the sputtering parameters, the molar weight of the finally sputtered metal nanoparticles is 18.4% of the molar weight of carbon atom...

Embodiment 3

[0046] (1) Graphene oxide was formulated into a graphene oxide aqueous solution with a concentration of 1 ug / mL, and a hydrophilic polytetrafluoroethylene membrane was used as a substrate to form a film by suction filtration.

[0047] (2) Put the graphene oxide film attached to the hydrophilic polytetrafluoroethylene in a closed container, and fumigate at a high temperature of 90 degrees HI from the bottom up for 0.5h.

[0048] (3) Uniformly coat the melted solid transfer agent sulfur on the surface of the reduced graphene oxide film by evaporation, casting, etc., and slowly cool it at room temperature.

[0049] (4) Slowly volatilize the graphene film supported by the solid transfer agent obtained above at 120 degrees to obtain an independent self-supporting graphene film.

[0050] (5) Spray one layer of metal cobalt on the graphene film surface of chemical reduction with the mode of magnetron sputtering, by controlling the sputtering parameter, the molar weight of the metal n...

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Abstract

The invention discloses a graphene / silicon solar cell, which comprises a transparent electrode layer, wherein the transparent electrode layer is a graphene thin film with a thickness not greater than20 nm, graphene layers are cross-linked with one another, and the cross-linking degrees range from 1 to 5%. The graphene thin film is obtained by carrying out the steps of vacuum filtering and film formation, chemical reduction, solid-phase transfer, metal spraying, intermediate-temperature carbonization, chlorination, high-temperature graphitization and the like on graphene oxide. The thin film is integrally of a graphene structure, and large quantities of interlayer cross-linked structures are arranged between layers. Compared with the prior art, the graphene thin film has high electron mobility and relatively low light transmittance, the solar energy absorption rate of silicon is increased by means of continuous reflection, electron holes formed in the graphene / silicon solar cell can beseparated under the action of a built-in electric field, and the light conversion efficiency can be improved.

Description

technical field [0001] The invention relates to a solar electrode, in particular to a graphene / silicon-based solar cell. Background technique [0002] With the increasingly serious environmental problems, the environmental problems brought about by the uncontrolled application of fossil energy have increasingly attracted the attention of adults. People are eager to find renewable, non-polluting new energy sources to replace heavily polluting fossil energy sources. And solar energy, as a source of earth statement, has been the object of attention. Among them, the graphene / silicon solar cell is one of the applications. It uses the different work functions of graphene (4.5eV) and silicon (4.31eV) to construct a heterojunction. The valence electrons in the photons absorb the photon energy of the incident light and undergo transitions, thereby forming electron-hole pairs. Under the action of the built-in electric field, the electron-hole pairs are separated and can be transpor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224
CPCH01L31/022425Y02E10/50
Inventor 高超彭蠡俞丹萍沈颖卡西克燕.戈坡塞米
Owner ZHEJIANG UNIV
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