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IGBT driving overcurrent fault monitoring method and device

A technology for overcurrent faults and monitoring devices, which is applied to measuring devices, measuring electricity, and measuring electrical variables, etc., can solve problems such as low reliability, and achieve the effect of improving reliability and accuracy and high reference value

Active Publication Date: 2018-12-07
XUJI GRP +3
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a method and device for monitoring an IGBT-driven overcurrent fault to solve the problem of low reliability in the prior art when only one overcurrent alarm signal is reported for each overcurrent fault alarm interval

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  • IGBT driving overcurrent fault monitoring method and device
  • IGBT driving overcurrent fault monitoring method and device
  • IGBT driving overcurrent fault monitoring method and device

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and examples, but the embodiments of the present invention are not limited thereto.

[0027] Embodiment of the IGBT driving overcurrent fault monitoring method of the present invention:

[0028] The software and hardware involved in using this method include: IGBT driver program, IGBT upper-level control circuit equipment SCE and IGBT-driven overcurrent monitoring circuit. These are all existing technologies and will not be introduced too much.

[0029] The voltage monitored by the overcurrent monitoring circuit is the voltage Vce between the collector and the emitter, and the k-level overcurrent fault alarm limit set in the program is Vce k (k=1,2,...), the set level X overcurrent alarm signal is FB X (X=1, 2, . . . ). i.e. at Vce 1 ≤Vce2 In the over-current fau...

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Abstract

The invention relates to an IGBT driving overcurrent fault monitoring method and an IGBT driving overcurrent fault monitoring device. The IGBT driving overcurrent fault monitoring method comprises thesteps of: monitoring an actually measured voltage between a collector and an emitter of an IGBT in real time; determining a fault level of the IGBT according to the actually measured voltage, whereinthe corresponding fault level corresponds to a set voltage range; and sending out an overcurrent alarm signal corresponds to the fault level and at least sending out overcurrent alarm signals twice when monitoring that the actually measured voltage is in the voltage range corresponding to the fault level each time at the fault level. The IGBT driving overcurrent fault monitoring method and the IGBT driving overcurrent fault monitoring device realize the whole-course monitoring of the IGBT in the overcurrent fault alarm range through processing logic signals by means of software control without changing the detection environment of hardware, avoid the occurrence of false alarms caused by adopting the international common methods, improve the reliability and precision of IGBT overcurrent fault detection, and have higher reference value.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a method and device for monitoring an IGBT drive overcurrent fault. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT), as an emerging high-power electronic device, combines the high input impedance of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and power transistor ( Giant Transistor, GTR) has the advantages of low conduction voltage drop, low driving power and low saturation voltage, so IGBT has been widely used in AC systems, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives And other fields, especially in the field of high-voltage flexible DC transmission, IGBT is the core device of high-voltage and large-capacity flexible DC converters and high-voltage DC circuit breakers. [0003] IGBT has bidirectional switching characteristics, and its flow capacity determines the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R19/165
CPCG01R19/16576G01R31/2601
Inventor 范彩云李娟洪波张志刚黄永瑞常忠廷张坤
Owner XUJI GRP
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