A method for preparing manganese-bismuth alloy film with room temperature exchange bias effect

A technology of alloy thin film and bias effect, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of small room temperature exchange bias field and no exchange bias field

Active Publication Date: 2020-10-09
山西师范大学
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Therefore, the technical problem to be solved by the present invention is to overcome the problems in the prior art that there is no exchange bias field or the exchange bias field at room temperature is small in manganese-bismuth alloys at room temperature, thereby providing a method for preparing manganese-bismuth alloys with room temperature exchange bias effect thin film method

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  • A method for preparing manganese-bismuth alloy film with room temperature exchange bias effect
  • A method for preparing manganese-bismuth alloy film with room temperature exchange bias effect
  • A method for preparing manganese-bismuth alloy film with room temperature exchange bias effect

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Embodiment 1

[0030] The present embodiment provides a method for preparing a manganese-bismuth alloy thin film with room temperature exchange bias effect, comprising the following steps:

[0031] Main preparation conditions: Mn sputtering power is 35W, Bi sputtering power is 8W, sputtering pressure is 2.3Pa, sputtering time is 2400s, annealing background vacuum is 1.0×10 -4 Pa, the annealing temperature is 380℃, and the annealing time is 2h;

[0032] Put Mn and Bi targets with a diameter of 60 mm and a purity of 99.99% and a glass substrate cleaned in advance into the magnetron sputtering chamber. Wait until the background vacuum of the vacuum chamber reaches 8.0×10 -5 When Pa, argon with a purity of 99.99% was introduced, and the flow rate of argon was adjusted to 80sccm. At the same time, the baffle valve was adjusted so that the sputtering pressure was 2.3Pa, the sputtering power of Mn was 35W, and the sputtering power of Bi was 8W. and sputtering at the same time, the sputtering time...

Embodiment 2

[0039] The present embodiment provides a method for preparing a manganese-bismuth alloy thin film with room temperature exchange bias effect, comprising the following steps:

[0040] Main preparation conditions: Mn sputtering power is 30W, Bi sputtering power is 8W, sputtering pressure is 2.3Pa, sputtering time is 2400s, annealing background vacuum is 1.0×10 -4 Pa, the annealing temperature is 380℃, and the annealing time is 2h;

[0041] Put Mn and Bi targets with a diameter of 60 mm and a purity of 99.99% and a glass substrate cleaned in advance into the magnetron sputtering chamber. Wait until the background vacuum of the vacuum chamber reaches 8.0×10 -5 When Pa, argon gas with a purity of 99.99% was introduced, the flow rate of argon gas was adjusted to 80sccm, and the baffle valve was adjusted to make the sputtering pressure 2.3Pa, the Mn sputtering power to be 30W, and the Bi sputtering power to be 8W. Sputtering, the sputtering time is 2400s; then the substrate after s...

Embodiment 3

[0044] The present embodiment provides a method for preparing a manganese-bismuth alloy thin film with room temperature exchange bias effect, comprising the following steps:

[0045] The main preparation conditions: Mn sputtering power is 28W, Bi sputtering power is 8W, sputtering pressure is 2.3Pa, sputtering time is 2400s, annealing background vacuum is 1.0×10-4 Pa, the annealing temperature is 380℃, and the annealing time is 2h;

[0046] Put Mn and Bi targets with a diameter of 60 mm and a purity of 99.99% and a glass substrate cleaned in advance into the magnetron sputtering chamber. The background vacuum of the vacuum chamber reaches 8.0×10 -5 When Pa, argon gas with a purity of 99.99% was introduced, and the flow rate of argon gas was adjusted to 80sccm. At the same time, the baffle valve was adjusted so that the sputtering pressure was 2.3Pa, the Mn sputtering power was 28W, and the Bi sputtering power was 8W. Sputtering, the sputtering time is 2400s; then the substrat...

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Abstract

The invention belongs to the technical field of preparation of manganese-bismuth alloy films, in particular to a method for preparing a manganese-bismuth alloy thin film with a room-temperature exchange bias effect. The preparation method comprises the following steps that high-purity working gas is used for simultaneously bombarding a high-purity manganese target and a bismuth target, the manganese bismuth is co-deposited on a substrate, and annealing treatment is carried out on the substrate after magnetron sputtering coating to obtain the manganese-bismuth alloy thin film with the room-temperature exchange bias effect. The magnetron sputtering coating and annealing conditions are selected, so that the maximum of the exchange bias field of the manganese-bismuth alloy thin film at the room temperature can reach 10320e.

Description

technical field [0001] The invention belongs to the technical field of manganese-bismuth alloy thin film preparation, in particular to a method for preparing a manganese-bismuth alloy thin film with room temperature exchange bias effect by magnetron sputtering. Background technique [0002] When a material system with a ferromagnetic / antiferromagnetic interface is cooled from an intermediate temperature above the antiferromagnetic Nell temperature but below the ferromagnetic Curie temperature to below the Neel temperature under the action of an external magnetic field, the hysteresis of the material The line will deviate from the origin in the direction of the magnetic field, a phenomenon known as the exchange bias effect. This effect can well overcome the limitation of superparamagnetism and spin pinning in magnetic recording materials, promote the development of miniaturization of information devices, and can be used in microdevices of materials in the fields of home appli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/58
CPCC23C14/185C23C14/352C23C14/5806
Inventor 许小红秦秀芳睢彩云
Owner 山西师范大学
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