Schottky junction conduction-type metal oxide semiconductor field effect transistor

Abstract

The invention provides a Schottky junction conduction-type metal oxide semiconductor field effect transistor, which comprises a drain metal, wherein the upper part of the drain metal is connected witha semiconductor substrate with a high doping concentration; a drift region is arranged at the upper part of the semiconductor substrate with the high doping concentration; a gate oxide layer, a source metal and a source expanded metal are arranged on the surface of the drift region; a gate electrode is arranged at the upper part of the gate oxide layer; and contact between the drift region and the source metal and contact between the drift region and the source expanded metal are Schottky contact. The Schottky junction conduction-type metal oxide semiconductor field effect transistor is simple in preparation and has very low characteristic on-resistance and very short body diode reverse recovery time.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, and more specifically relates to a Schottky junction conduction metal oxide semiconductor field effect transistor suitable for high voltage applications. Background technique [0002] Metal oxide semiconductor field effect transistors have the advantages of high withstand voltage, large gain, easy driving, and small on-resistance, and are widely used in power converters, especially in high-frequency power conversion places. The characteristic on-resistance of metal-oxide-semiconductor field-effect transistors is one of the main properties of the device, which determines the cost of the device and the performance of the application system. Reducing the characteristic on-resistance of the device is the goal that device designers are constantly pursuing. [0003] The characteristic on-resistance of metal-oxide-semiconductor field-effect transistors is mainly composed of drift region resist...

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Problems solved by technology

Especially for metal oxide semiconductor field effect transistors made of silicon carbide, due to their low channel carrier mobility, the channel region resistance becomes an important issue that is difficult to reduce the characteristic on-resistance of the device.

[0004] The reverse recovery time of the body diode of the metal oxide semiconductor field effect transistor also affects the performance of the device. The body diode of the conventional metal oxide semiconductor field effect transistor is a PN junction diode, and the large injection effect of the PN junction diode makes the device A large number of carriers are stored in the drift region, resulting in a long reverse recovery time of the device. Therefore, when the body diode of a conventional MOSFET is used for freewheeling, the reverse recovery of the body diode will cause a large energy consume

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