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Semiconductor and two-dimensional material combined power device and preparation method thereof

A technology of two-dimensional materials and power devices, which is applied in the field of electronics and can solve the problem that transistors do not have a wider range of applications.

Active Publication Date: 2018-11-23
贵溪穿越光电科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The main purpose of the present invention is to provide a combined power device of semiconductor and two-dimensional material and its preparation method, aiming to solve the technical problem that existing transistors do not have a wider range of applications

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  • Semiconductor and two-dimensional material combined power device and preparation method thereof
  • Semiconductor and two-dimensional material combined power device and preparation method thereof
  • Semiconductor and two-dimensional material combined power device and preparation method thereof

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Embodiment Construction

[0037] In order to make the purpose, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

[0038] see figure 1 , which is a schematic structural diagram of a semiconductor and two-dimensional material combined power device provided by an embodiment of the present invention, the combined power device includes a heterojunction field effect transistor 1 and a two-dimensional material transistor 2 with the same substrate, wherein , in...

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Abstract

The invention discloses a semiconductor and two-dimensional material combined power device and a preparation method thereof; the combined power device comprises a heterojunction field effect transistor and a two-dimensional material transistor which are arranged on the same substrate, wherein the substrate is provided with a two-dimensional material layer, and a GaN layer, an AlGaN layer which aresequentially arranged on the substrate; and an ohmic contact electrode and a schottky contact electrode are arranged at the two ends of the AlGaN layer and the two-dimensional material layer. The heterojunction field effect transistor and the two-dimensional material transistor in the combined power device are arranged on the same substrate, namely the combined power device has a large breakdownelectric field of the heterojunction field effect transistor, a high electron saturation rate, high radiation resistance, high chemical stability and the like; in addition, the high-energy efficiencyof the two-dimensional material transistor is also achieved, so that the combined power device can be applied to a flexible screen, a high-resolution liquid crystal display, an organic light-emittingdiode display and the like, and therefore, the combined power device provided by the invention has a wider application range.

Description

technical field [0001] The invention relates to the field of electronic technology, and more specifically, to a combined power device of a semiconductor and a two-dimensional material and a preparation method thereof. Background technique [0002] As the basic carrier of modern information, the continuous upgrading of integrated circuits is a concentrated expression of the rapid progress of modern electronic information technology. As one of the basic components of integrated circuits, transistors play a key role in the development of integrated circuits. However, existing Transistors only have their own advantages and only have a certain range of applications. When integrated circuits are replaced faster, they will be quickly eliminated because they do not have certain application prospects. For example, GaN heterogeneous Junction field effect transistors only have the characteristics of large breakdown electric field and high electron saturation rate but not strong applica...

Claims

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Application Information

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IPC IPC(8): H01L27/095H01L21/8258
CPCH01L21/8258H01L27/095
Inventor 刘新科胡聪王佳乐
Owner 贵溪穿越光电科技有限公司
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