A method of controlling fused silica static acid etch deposits

A technology of fused silica and acid etching, which is applied in the field of controlling fused silica static acid etching deposits, can solve the problems of components failing to reach the optical index, threshold drop surface deposits, uneven etching, etc., without destroying the surface shape and roughness degree, improve the laser damage threshold, and avoid the effects of deposits

Active Publication Date: 2021-06-08
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The use of megasonic / ultrasonic waves in hydrofluoric acid has the following technical problems: 1) uneven etching caused by the temperature rise effect of the etching solution caused by the sound field, 2) the hydrofluoric acid corrosion resistance of the vibration plate coating material, 3) Circular filtration during the cleaning reaction process, 4) Megasonic waves produce standing wave fields, interference, turbulence and other problems, which cause local etching to be too fast, resulting in surface shape deterioration, or local area transportation that is too slow to cause sediment deposition, resulting in a large cost The amplitude is increased and the etched components cannot meet the requirements of optical indicators
Etching without ultrasound and megasonics, that is, static etching, short-term etching has no effect on the surface shape, but long-term etching will cause a decrease in the threshold and the formation of surface deposits, such as figure 1 shown

Method used

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  • A method of controlling fused silica static acid etch deposits
  • A method of controlling fused silica static acid etch deposits
  • A method of controlling fused silica static acid etch deposits

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A method of controlling fused silica static acid etching deposits, comprising the steps of:

[0035] Step 1. Put 50mm×50mm×5mm fused silica into the buffered hydrofluoric acid etching solution, the temperature is 23°C, the etching time for a single reaction is 15min, and the average etching rate is 1.5μm / h;

[0036] Step 2. Spray and rinse the fused silica etched in step 1 with high-purity water. The spray pressure is 0.5Mpa, the temperature is 30°C, the flow rate is 120L / min, and the time is 15min, to remove excess acid and a large amount of SiF on the surface. 6 2- ;

[0037] Step 3. Put the fused silica rinsed in step 2 into a tank filled with high-purity water for ultrasonic rinsing at a temperature of 35°C, ultrasonic power density of 10W / L, 220KHz ultrasonic cleaning for 20min, and 270KHz for 20min to further remove SiF 6 2- ion;

[0038] Step 4. Put the fused silica after rinsing in Step 3 into a tank filled with high-purity water, the temperature is 55°C, th...

Embodiment 2

[0043] A method of controlling fused silica static acid etching deposits, comprising the steps of:

[0044] Step 1. Put 50mm×50mm×5mm fused silica into the buffered hydrofluoric acid etching solution, the temperature is 24°C, the etching time for a single reaction is 20min, and the average etching rate is 2μm / h;

[0045] Step 2. Spray and rinse the fused silica etched in step 1 with high-purity water. The spray pressure is 0.6Mpa, the temperature is 32°C, the flow rate is 120L / min, and the time is 20min, to remove excess acid and a large amount of SiF on the surface. 6 2- ;

[0046] Step 3. Put the fused quartz rinsed in Step 2 into a tank filled with high-purity water for ultrasonic rinsing at a temperature of 35°C, with an ultrasonic power density of 10W / L, 220KHz ultrasonic cleaning for 25min, and 270KHz cleaning for 25min to further remove SiF 6 2- ion;

[0047] Step 4. Put the fused silica after rinsing in Step 3 into a tank filled with high-purity water, the temperat...

Embodiment 3

[0052] A method of controlling fused silica static acid etching deposits, comprising the steps of:

[0053] Step 1. Put the fused silica of 430mm×430mm×20mm into the buffered hydrofluoric acid etching solution, the temperature is 24°C, the etching time for a single reaction is 20min, and the average etching rate is 1.8μm / h;

[0054] Step 2. Spray and rinse the fused silica etched in step 1 with high-purity water. The spray pressure is 0.6Mpa, the temperature is 32°C, the flow rate is 120L / min, and the time is 18min, to remove excess acid and a large amount of SiF on the surface. 6 2- ;

[0055] Step 3. Put the fused silica rinsed in step 2 into a tank filled with high-purity water for ultrasonic rinsing at a temperature of 35°C, with an ultrasonic power density of 12W / L, 220KHz ultrasonic cleaning for 25min, and 270KHz for 20min to further remove SiF 6 2- ion;

[0056] Step 4. Put the fused quartz rinsed in Step 3 into a tank filled with high-purity water at a temperature ...

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Abstract

The invention discloses a method for controlling static acid etching deposits of fused quartz. The method utilizes the concentration diffusion of hexafluorosilicate radical in the short-time acid etching process, and sprays and ultrasonically cleans the fused quartz element to remove residual ions after acid etching. Repeat the process of acid etching, spraying, and ultrasonic rinsing many times to achieve a certain depth of fused silica etching, which not only avoids the appearance of deposits, maintains the surface shape, but also improves the laser damage threshold, and realizes the fused silica polishing layer and The defect layer is effectively and completely removed, and no deposit is generated; the method has the advantages of simple operation, controllability, no damage to the surface shape and roughness of the optical element, and economy.

Description

technical field [0001] The invention belongs to the technical field of optical materials and optical elements, and specifically discloses a method for controlling static acid etching deposits of fused silica. Background technique [0002] The fused silica transmission elements used in large high-power solid-state laser devices have very high requirements on the surface index and laser damage threshold. Fused silica components obtained by traditional processing methods contain impurities in the polishing layer, embedded pollutants, and subsurface defects (including microcracks, pits, etc.). In order to increase the laser damage threshold, these impurities and defects must be removed. Currently, the most effective method is The components are etched using a solution containing hydrofluoric acid. There are two main types of acid etching solutions, one is a hydrofluoric acid solution, and the other is a solution containing NH 4 F's hydrofluoric acid buffer solution (BHF), also...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C15/02C03C15/00
CPCC03C15/00C03C15/02
Inventor 杨科严鸿维刘太祥晏良宏陈静贾宝申李合阳张卓黄贝聪吕海兵蒋晓东
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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