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CsPbX3 quantum dot room temperature synthetic method

A technology of room temperature synthesis and quantum dots, which is applied in the field of room temperature synthesis of CsPbX3 quantum dots, and can solve problems such as the need for an inert gas environment, poor application effect of electroluminescent devices, and complicated operations

Inactive Publication Date: 2018-11-13
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the more classic perovskite quantum dots are synthesized by high temperature (usually above 120°C) thermal injection method, the operation is relatively complicated and requires an inert gas environment
Synthesis of CsPbX at low or room temperature 3 Quantum dots have gradually attracted people's attention, but the currently reported CsPbX synthesized at room temperature 3 Although the fluorescence quantum yield of quantum dots also meets the requirements, the application effect in electroluminescent devices is very poor, and they are often only used in photoluminescence

Method used

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  • CsPbX3 quantum dot room temperature synthetic method
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  • CsPbX3 quantum dot room temperature synthetic method

Examples

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Embodiment 1

[0030] 1) Dissolve 1.2mmol of cesium carbonate in 3mL of octanoic acid to form a cesium precursor;

[0031] 2) 2 mmol of lead bromide and 4.4 mmol of tetra-n-octyl ammonium bromide were mixed in 30 mL of toluene and stirred in air at room temperature until completely dissolved to obtain a lead precursor;

[0032] 3) ultrasonically dissolve 0.6mmol DDAB in 10mL toluene;

[0033] 4) Inject the cesium precursor into the lead precursor, react for 3 minutes, add the DDAB solution in step 3), and continue stirring for 2 minutes to obtain CsPbBr 3 Quantum dot stock solution;

[0034] 5) Add 60mL ethyl acetate to the quantum dot stock solution and centrifuge to discard the supernatant, and disperse the precipitate in 10mL n-octane to obtain CsPbBr 3 quantum dots.

[0035] Application: Sequential spin coating of PEDOT:PSS, PTAA and CsPbBr on glass substrate with ITO electrodes 3 Quantum dots, and then sequentially evaporate 40nm TPBi, 1nm LiF and 100nm Al electrodes in a thermal ev...

Embodiment 2

[0037] Using the same process as in Example 1, the difference is that octanoic acid is changed to hexanoic acid in step 1) of Example 1, and other conditions remain the same.

Embodiment 3

[0039] Adopt the same process of embodiment 1, the difference is that tetra-n-octyl ammonium bromide is changed into tetrahexyl ammonium bromide in step 2) of embodiment 1, and other conditions remain the same.

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Abstract

The invention discloses a CsPbX3 quantum dot room temperature synthetic method. The CsPbX3 quantum dot room temperature synthetic method comprises the following steps: dissolving cesium carbonate in alkyl chain organic acid to prepare a cesium precursor; dissolving lead bromide and branched-chain organic ammonium bromide in toluene, and carrying out stirring and dissolution in room-temperature airto obtain a lead precursor; dissolving DDAB (Didodecyl Dimethyl Ammonium Bromide) in the toluene to obtain a DDAB solution; injecting the cesium precursor into the lead precursor and carrying out stirring reaction to obtain an intermediate; adding the DDAB solution into the obtained intermediate, and carrying out stirring reaction to obtain a CsPbX3 quantum dot stock solution; adding the obtainedCsPbX3 quantum dot stock solution into a purifying solvent for centrifugation; then dispersing in an organic solvent to obtain CsPbX3 quantum dots. According to the CsPbX3 quantum dot room temperature synthetic method disclosed by the invention, the CsPbX3 quantum dot with excellent luminescence property is synthesized under room temperature by utilizing the synergism matching of three ligands, the quantum yield of an ink dispersion solution exceeds 90 percent, and meanwhile, the CsPbX3 quantum dot room temperature synthetic method also has radiative recombination of single channels.

Description

technical field [0001] The present invention relates to a kind of CsPbX 3 Synthesis method of quantum dots at room temperature. Background technique [0002] CaB 3 Due to the advantages of high quantum yield, narrow luminescence peak and high thermal stability, quantum dot materials have attracted extensive attention of researchers in recent years. In optoelectronic fields such as LED devices, detectors, and solar cells, CsPbX 3 Quantum dots have performed well and have very broad prospects. At present, the more classic perovskite quantum dots are synthesized by high temperature (usually above 120°C) thermal injection method, which is relatively complicated to operate and requires an inert gas environment. Synthesis of CsPbX at low or room temperature 3 Quantum dots have gradually attracted people's attention, but the currently reported CsPbX synthesized at room temperature 3 Although the quantum yield of quantum dots also meets the requirements, the application effect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G21/00C09K11/66B82Y20/00B82Y40/00
CPCC01G21/006B82Y20/00B82Y40/00C01P2002/34C01P2004/64C09K11/665
Inventor 宋继中李建海许蕾梦李金航
Owner NANJING UNIV OF SCI & TECH
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