A light-emitting diode epitaxial wafer and its preparation method

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The epitaxial wafer includes a substrate, a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, wherein the buffer layer, the N-type semiconductor layer, the active layer and the P-type semiconductor layerare stacked on the substrate. The active layer comprises n quantum wells and (n+1) quantum barriers, wherein n is an integer which is not less than two. The n quantum wells and (n+1) quantum barriersare alternately stacked, and each quantum well is an indium gallium nitride layer. The quantum barrier which is the closest to the N-type semiconductor layer is a gallium nitride layer, and all otherquantum barriers are of composite structures. The composite structures of the quantum barriers between all adjacent quantum wells each include a first sub-layer, a second sub-layer, a third sub-layer, a fourth sub-layer and a fifth sub-layer, wherein the first sub-layer and the fifth sub-layer are gallium nitride layers, the second sub-layer is an aluminum gallium nitride layer, and the third sub-layer is an N-type doped gallium nitride layer, and the fourth sub-layer is an indium gallium nitride layer. The epitaxial wafer can improve the luminous efficiency of an LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] GaN-based group III nitride materials are wide bandgap compound semiconductor materials with excellent physical and chemical properties. In particular, GaN materials have been extensively researched and widely used in fields such as light emitting diodes (English: Light Emitting Diode, LED for short), lasers, power devices, and ultraviolet light detectors. In the LED field, InGaN blue-green light technology has been commercialized, and there is a tendency to accelerate the replacement of traditional lighting. [0003] The epitaxial wafer is the primary product in the preparation process of the light-emitting diode. At present, the GaN-based blue-green light-emitting diode epitaxial wafer includes a substrate and a buffer layer, an N-type layer, an active layer and a P-ty...

AI Technical Summary

Problems solved by technology

After the electrons provided by the N-type semiconductor layer and the holes provided by the P-type semiconductor layer are injected into the multi-quantum well layer, they are confined in the quantum well by the quantum barrier for radiative recombination and light emission, but the luminous efficiency of existing LEDs needs to be improved.

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