RESURF GaN-based Schottky barrier diode based on field plate and P-type GaN cap layer

Abstract

The present invention relates to an RESURF GaN-based Schottky barrier diode based on a field plate and a P-type GaN cap layer. The diode comprises a substrate layer, a buffer layer on the substrate layer, a channel layer on the buffer layer, a barrier layer on the channel layer, a cathode and a composite anode positioned at both ends of the barrier layer, a P-type GaN cap layer connected to the composite anode and positioned on the barrier layer, a base electrode connected to the composite anode and positioned on the P-type GaN cap layer, and a passivation layer, wherein the passivation layercovers a the barrier layer, the P-type GaN cap layer, the base electrode, the composite anode and the cathode; the cathode is cathode ohmic contact, and the composite anode comprises anode ohmic contact and anode Schottky contact. In diode disclosed in the embodiment of the invention, the P-type GaN cap layer and the base electrode are introduced, and the composite anode is used to prepare a GaN-based Schottky barrier diode having low forward turn-on voltage and high reverse breakdown voltage.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a RESURF GaN-based Schottky barrier diode based on a field plate and a P-type GaN cap layer. Background technique [0002] With the development of microelectronics technology, the performance of traditional first-generation Si semiconductors and second-generation GaAs semiconductor power devices has approached the theoretical limit determined by their materials themselves. Further reducing chip area, increasing operating frequency, reducing on-resistance, and improving breakdown voltage have become the focus of research at home and abroad. The wide bandgap semiconductor materials represented by gallium nitride (GaN) have stood out in the preparation of high-performance power devices in recent years, and their application potential is huge. GaN-based Schottky barrier diodes are ideal devices to replace Si-based Schottky barrier diodes. However, there are many deficiencies in curren...

AI Technical Summary

Problems solved by technology

For GaN materials, the diffusion coefficient of P-type impurities (such as Mg) in GaN is very low, so that accurate local doping cannot be achieved by thermal diffusion; and the ion implantation technology is not yet mature, and the lattice damage caused by it is difficult to use. annealing method to eliminate

[0004] To sum up, in traditional GaN-based Schottky barrier diodes, the Schottky contact barrier will affect the forward turn-on voltage and reverse withstand voltage of the device, and it is difficult to satisfy both at the same time to achieve high performance Index, which makes the device in the design and work, there is a compromise between forward loss and withstand voltage capability

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