Composite oxide microcrystalline glass, insulating medium slurry and preparation method and application thereof

A composite oxide and glass-ceramic technology, applied in metal oxides, insulators, insulators, etc., can solve problems such as limited dielectric strength and short circuit, and achieve the effects of improving compactness, simple preparation process and good stability

Active Publication Date: 2018-10-19
NINGBO POLYTECHNIC
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of dielectric paste with low melting point glass as the main inorganic phase provides limited dielectric strength, and it is easy to be broken down in harsh working environments such as high-temperature and variable high-power thick-film circuits, resulting in short circuits and other phenomena.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composite oxide microcrystalline glass, insulating medium slurry and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A composite oxide glass-ceramic, SiO 2 -B 2 o 3 -Cs 2 O-P 2 o 5 -MnO 2 -Co 2 o 3 -Ta 2 o 5 -CeO 2 -Er 2 o 3 Composite oxide glass-ceramics, the mass percentage of each component is SiO 2 : 32.5%, B 2 o 3 : 20%, Cs 2 O: 8%, P 2 o 5 : 24%, MnO 2 : 3.5%, Co 2 o 3 : 1%, Ta 2 o 5 : 6%, CeO 2 : 2.5%, Er 2 o 3 : 2.5%.

Embodiment 2

[0027] The difference from Example 1 is that the mass percent of each component of the composite oxide glass-ceramics in this example is SiO 2 : 25%, B 2 o 3 : 11%, Cs 2 O: 12%, P 2 o 5 : 40%, MnO 2 : 3%, Co 2 o 3 : 1.5%, Ta 2 o 5 : 4%, CeO 2 : 2%, Er 2 o 3 : 1.5%.

Embodiment 3

[0029] The difference from Example 1 is that the mass percent of each component of the composite oxide glass-ceramics in this example is SiO 2 : 39%, B 2 o 3 : 20%, Cs 2 O: 4%, P 2 o 5 : 20%, MnO 2 : 5%, Co 2 o 3 : 1.5%, Ta 2 o 5 : 7%, CeO 2 : 2.5%, Er 2 o 3 :1%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
breakdown voltageaaaaaaaaaa
electrical resistanceaaaaaaaaaa
electrical resistanceaaaaaaaaaa
Login to view more

Abstract

The invention relates to composite oxide microcrystalline glass, and an insulating medium slurry and preparation method and application thereof, and belongs to the technical field of thick film circuits. The composite oxide microcrystalline glass is SiO2-B2O3-Cs2O-P2O5-MnO2-Co2O3- Ta2O5-CeO2-Er2O3 composite oxide microcrystalline glass; the insulating medium slurry includes an organic carrier andan inorganic main phase composed of the composite oxide microcrystalline glass. The preparation method of the insulating medium slurry includes: mixing raw materials according to a ratio; heating themixture to 1100-1700 DEG C for 1-24 hours; performing water quenching, drying, and ball milling; mixing the mixture with the organic carrier in proportion; and finally using a three-roll mill to perform rolling repeatedly, and obtaining a thick film circuit insulating medium slurry. The slurry is used for a high-power thick-film circuit insulating dielectric layer of a stainless steel substrate, has a large expansion coefficient, good adhesion, high insulation and resistance, high breakdown voltage, and low leakage current.

Description

technical field [0001] The invention relates to a composite oxide glass-ceramic, an insulating dielectric paste, a preparation method and application thereof, and belongs to the technical field of thick-film circuits. Background technique [0002] Thick-film electronic paste is the main material for preparing thick-film circuits. It is widely used in electronic packaging, interconnection and passive components. With the increase of the power of thick-film circuits, this technology is gradually applied to electric heating elements, especially in high-end Small household appliances such as rice cookers, electric kettles, electric water heaters, electric irons, disinfection cabinets and hairdressing devices, etc. [0003] Thick-film electronic paste is mainly divided into insulating dielectric paste, resistance paste and conductive paste. The insulating dielectric paste is coated on the surface of the substrate to provide an insulating layer. Its basic composition is a glass ph...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01B3/00H01B3/08H01B3/10H01B17/62H01B19/00C03C10/00
CPCC03C10/00H01B3/008H01B3/08H01B3/10H01B17/62H01B19/00
Inventor 袁正勇匡新谋翁晓平
Owner NINGBO POLYTECHNIC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products