Silicon nitride ceramic slurry, silicon nitride ceramic and preparation method and application thereof
A technology of silicon nitride ceramics and silicon nitride powder, which is applied in the field of ceramic materials, can solve the problems of limiting light-curing molding technology and the development of silicon nitride ceramics, low single-layer curing depth, and scattering of silicon nitride ceramics, etc., to achieve reduction Exposure time, low cost, effect of promoting sintering densification
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0030] The invention provides a specific embodiment of the preparation method of silicon nitride ceramic slurry, and its preparation steps are as follows:
[0031] (1) Powder preparation: Put the silicon nitride powder into an air sintering furnace for oxidation treatment to obtain thermally oxidized silicon nitride powder;
[0032] (2) Powder mixing: after mixing the thermal oxidized silicon nitride powder obtained in (1) and the sintering aid powder, drying to obtain a dry powder;
[0033] (3) Slurry preparation: mix the dry powder in (2) with resin, dispersant, defoamer and photoinitiator to obtain silicon nitride ceramic slurry.
[0034] Specifically, the mixing is ball milling.
[0035] Specifically, the drying condition is drying at 60° C. for 24 hours.
[0036] Specifically, step (1) is dried and passed through a 100-mesh sieve to obtain a dry powder.
[0037] Specifically, the particle size of the thermally oxidized silicon nitride powder is 0.2-1 μm.
[0038] Spec...
Embodiment 1
[0063] The embodiment of the present invention provides the first kind of preparation method of silicon nitride ceramic slurry, and its steps are as follows:
[0064] (1) Powder preparation: put silicon nitride powder with a particle size of 0.2 μm into an air sintering furnace, raise the temperature to 1150°C at a heating rate of 5°C / min, and keep it for 2 hours to obtain thermally oxidized silicon nitride powder , to detect the SiO of the thermally oxidized silicon nitride powder of this embodiment 2 Proportions, the results are shown in Table 1;
[0065] (2) Powder mixing: 50g of thermal oxidized silicon nitride powder and 4g of Y 2 o 3 Mix by ball milling for 8 hours, dry at 60°C for 24 hours, and pass through a 100-mesh sieve to obtain a uniformly mixed dry powder;
[0066] (3) Slurry preparation: 40g of dry powder, 8.5g of 1,6-hexanediol diacrylate (HDDA), 8.5g of pentaerythritol tetraacrylate (PETTA), 0.4g of BYK-9077, 0.6 g of BYK-057 and 0.26 g of phenylbis(2,4,6-...
Embodiment 2
[0074] The embodiment of the present invention provides a second method for preparing silicon nitride ceramic slurry, the steps of which are as follows:
[0075] (1) Powder preparation: Put the silicon nitride powder with a particle size of 0.7 μm into an air sintering furnace, raise the temperature to 1300°C at a heating rate of 10°C / min, and keep it for 1h to obtain a thermally oxidized silicon nitride powder ;
[0076] (2) Powder mixing: 50g of thermally oxidized silicon nitride powder and 5g of La 2 o 3 Mix by ball milling for 8 hours, dry at 60°C for 24 hours, and pass through a 100-mesh sieve to obtain a uniformly mixed dry powder;
[0077] (3) Slurry preparation: 40g of dry powder, 8.5g of 1,6-hexanediol diacrylate (HDDA), 8.5g of trimethylolpropane triacrylate (TMPTA), 0.4g of BYK -163, 0.8g BYK-057, and 0.3g of (2,4,6-trimethylbenzoyl)diphenylphosphine oxide (TPO) were uniformly mixed to obtain a silicon nitride ceramic slurry.
[0078] The embodiment of the prese...
PUM
Property | Measurement | Unit |
---|---|---|
Particle size | aaaaa | aaaaa |
Particle size | aaaaa | aaaaa |
Particle size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com