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A kind of alloy etching liquid and the etching method of alloy

An etchant and etching technology, applied in the field of touch screens, can solve the problems of difficulty in grasping the degree of etching and different etching rates

Active Publication Date: 2020-05-22
TRULY OPTO ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the difficulty of this structure is that the etching rate between the layers is different. When using the existing etching solution to etch the substrate of the structure, the etching degree is difficult to grasp. Therefore, it is necessary to develop a special etching solution to allow Etch rate is consistent between different layers

Method used

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  • A kind of alloy etching liquid and the etching method of alloy
  • A kind of alloy etching liquid and the etching method of alloy
  • A kind of alloy etching liquid and the etching method of alloy

Examples

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Embodiment 1~3

[0037] According to the formula in Table 1, use deionized water to prepare alloy etching solution, and to figure 1 The structure shown was etched. The results are shown in Table 3.

[0038] The composition of alloy etching solution in the embodiment of the present invention 1~3 in table 1

[0039] Example acetic acid(%) Hydrogen peroxide (%) Surfactant(%) Defoamer (%) 1 5 20 1.5 1.0 2 10 20 1.5 1.0 3 10 30 1.5 1.0

[0040] The surfactant in Examples 1-3 is sodium lauryl sulfate; the defoamer is polydimethylsiloxane.

Embodiment 1~3 and comparative example 1~3

[0045] Table 3 The etching effect of alloy etching solution in the embodiment 1~3 of the present invention and comparative example 1~3

[0046]

[0047] Visible by the comparison of embodiment 2 and comparative example 1, strong acid has greater influence to the etching speed of copper, can influence the effect of etching;

[0048] By the comparison of embodiment 1 and embodiment 2, it can be seen that the amount of acetic acid content has a greater impact on the etching rate of copper, and the too low content of acetic acid will cause endless etching;

[0049] Visible by the comparison of embodiment 2 and comparative example 3, FeCl 3 It is not as good as hydrogen peroxide in controlling the rate of etching.

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Abstract

The invention provides an alloy etching liquid which comprises the following components: 5-25wt% of acetic acid, 1-35wt% of hydrogen peroxide, 0.1-5wt% of a surfactant, 0.1-5wt% of a defoamer, and thebalance deionized water. The alloy etching liquid provided by the invention has the beneficial effects that aiming at a special sandwich structure shown in figure 1, the compatibility of acetic acidand hydrogen peroxide is adopted, so that the etching rate can be effectively controlled, the rates of etching on different layers can be consistent, and the etching effect can be improved; and experimental results indicate that when the alloy etching liquid provided by the invention is adopted for etching a three-layer alloy structure shown in figure 1, a smooth etching interface can be formed, the etching rate can be controlled, and residues can be prevented from being left on the surface. The invention further provides an alloy etching method.

Description

technical field [0001] The invention belongs to the technical field of touch screens, and in particular relates to an alloy etching solution and an alloy etching method. Background technique [0002] Metal grid technology is more and more widely used in the field of large-size touch screens. It mainly uses metal materials such as copper to press the conductive metal grid pattern formed on the film. However, using copper material to make the metal grid pattern, its reflectivity is too high, and the produced products will have serious bottom shadow. In order to improve the bottom shadow effect and reduce the reflectivity of copper traces, generally use such as figure 1 The sandwich structure shown can not only achieve high conductivity, but also reduce the reflectivity of the wiring, and achieve the effect of slight or even no shadow. [0003] However, the difficulty of this structure is that the etching rate between the layers is different. When using the existing etching s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18C23F1/20C23F1/30
CPCC23F1/18C23F1/20C23F1/30
Inventor 吴德生崔子龙林高
Owner TRULY OPTO ELECTRONICS
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