Surface plasmon-semiconductor heterojunction resonant optoelectronic device and preparation method thereof

Abstract

The present invention provides a surface plasmon-semiconductor heterojunction resonant optoelectronic device and a preparation method thereof. Surface ligand molecules (2) are modify on a surface plasmon nanostructure (1), a surface plasmon crystal face structure (3) is bound on surface ligand molecules (1), a semiconductor nanostructure seed crystal (4) is located on the surface plasmon crystal face structure (3), a one-dimensional semiconductor nanostructure (5) is located on the semiconductor nanostructure seed crystal, and portions form tight contact. The heterogeneous integrated materialsachieve matching of crystal lattices at the interfaces to greatly reduce loss caused by defects and rough crystal faces, achieve direct coupling of a surface plasmon mode and an optical mode and havea good appliance prospect in the fields of nanometer lasers, nanometer heat sources, photoelectric detection and photocatalysis.

Description

technical field [0001] The invention relates to the field of nanomaterials and integrated optical devices, in particular to a surface plasmon-semiconductor heterojunction resonant optoelectronic device and a preparation method thereof. Background technique [0002] With the continuous development of semiconductor theory, while pursuing the miniaturization and integration of devices, how to construct semiconductor optoelectronic devices with high quantum efficiency, low cost and mass production is currently a hot research direction, and has opened up a series of new fields of application. However, due to the limitation of the band gap of semiconductor nanomaterials and the recombination of photogenerated carriers, traditional optoelectronic devices based on semiconductor materials have defects such as limited response wavelength and low quantum efficiency, which lead to such devices in practicability, Reliability and cost limit its application range and further industrializa...

AI Technical Summary

Problems solved by technology

The preparation process is complicated, the cost is high and the cycle is long. At the same time, it is difficult for the above technical means to realize semiconductor materials with adjustable aspect ratio, controllable density and variable orientation on the surface plasmon structure.

The crystal plane mismatch between different materials also leads to high interface loss and many uncertainties in the formed heterogeneous integrated optoelectronic devices, and the practicability and stability of the devices also need to be further explored

[0004] Therefore, there is an urgent need for a high-quality, stable and high-efficiency heterogeneous integrated optoelectronic device that can be prepared in large quantities, avoiding the poor "specificity" brought about by the traditional structural crystal plane technology (leading to the extremely easy generation of core-shell structures that cannot be realized. Light wave conduction), uncontrollable and other defects, so as to realize the direct and efficient coupling of surface plasmon polaritons and optical modes

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