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Photomask, manufacturing method thereof, and exposure method

A manufacturing method and photomask technology, applied in the field of photomask and its manufacturing and exposure, can solve the problems of exposure resolution reduction, exposure failure, etc., and achieve the goals of improving exposure resolution, reducing key dimensions, and optimal exposure resolution Effect

Active Publication Date: 2021-07-23
POWERCHIP SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the distance between the light-transmitting regions for forming the exposure pattern on the photomask is too short, the light rays will interfere after passing through the light-transmitting regions of the photomask, which reduces the exposure resolution. It may even lead to exposure failure

Method used

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  • Photomask, manufacturing method thereof, and exposure method
  • Photomask, manufacturing method thereof, and exposure method
  • Photomask, manufacturing method thereof, and exposure method

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Embodiment Construction

[0042] Figure 1A to Figure 1G It is a three-dimensional schematic diagram of a manufacturing process of a photomask according to an embodiment of the present invention. figure 2 for Figure 1C Schematic cross-section of the filter layer in . image 3 for Figure 1F Schematic cross-section of the filter layer in .

[0043] Please refer to Figure 1A , forming a light blocking layer 102 on the transparent substrate 100 . The light blocking layer 102 has at least one opening 104 and at least one opening 106 arranged alternately. The material of the transparent substrate 100 is, for example, quartz. The material of the light blocking layer 102 is, for example, Cr, MoSi or a combination thereof. The method for forming the light-shielding layer 102 is, for example, physical vapor deposition. The forming method of the opening 104 and the opening 106 is, for example, performing a patterning process on the light-shielding layer 102 . The opening 104 and the opening 106 can re...

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Abstract

The invention discloses a photomask, a manufacturing method thereof and an exposure method. The photomask includes a transparent substrate, a light shielding layer, at least one first filter pattern and at least one second filter pattern. The light shielding layer is disposed on the transparent substrate and has at least one first opening and at least one second opening arranged alternately. The first filter pattern is disposed in the first opening and only allows the first light with the first wavelength to pass through. The second filter pattern is disposed in the second opening and only allows the second light with the second wavelength to pass through. The first wavelength and the second wavelength are different wavelengths.

Description

technical field [0001] The invention relates to a photomask, a manufacturing method thereof, and an exposure method, and in particular to a photomask with high exposure resolution, a manufacturing method thereof, and an exposure method. Background technique [0002] In the semiconductor manufacturing process, photolithography plays a pivotal role, and the exposure resolution is an important indicator of photolithography quality. Generally, during exposure, the light emitted by the light source will pass through the light-transmitting area on the photomask and irradiate the photoresist layer, thereby forming an exposure pattern on the photoresist layer. [0003] Under the trend of continuous miniaturization of semiconductor elements, the distance between the exposure patterns formed on the photoresist layer is also continuously shrinking, so the distance between the light-transmitting regions used to form the exposure patterns on the photomask also decreases. With shrinking....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/30
CPCG03F1/30
Inventor 林俊良
Owner POWERCHIP SEMICON MFG CORP
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