Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MnZn power ferrite for MHz-level switching mode power supply and preparation method of MnZn power ferrite

A switching power supply and ferrite technology, which is applied in the manufacture of inductors/transformers/magnets, circuits, electrical components, etc., can solve the problems of high sintering temperature and high material loss, and achieve low sintering temperature, reduced loss, and low power loss. Effect

Active Publication Date: 2018-08-21
江西尚朋电子科技有限公司
View PDF8 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The patent (application publication number CN102311263A) discloses "High-frequency, low-loss, high-Bs ferrite material for LED lighting and switching power supply transformers and its preparation method", its μ i =1800±25%, Bs=510mT(25℃), power consumption at 100℃, 500kHz50mT is less than 80mW / cm 3 ;Curie temperature Tc=260℃, resistivity ρ=6.5Ω˙m, sintering temperature is 1300~1350℃, the loss of this material is high, and the sintering temperature is high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MnZn power ferrite for MHz-level switching mode power supply and preparation method of MnZn power ferrite
  • MnZn power ferrite for MHz-level switching mode power supply and preparation method of MnZn power ferrite
  • MnZn power ferrite for MHz-level switching mode power supply and preparation method of MnZn power ferrite

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] The high-frequency low-loss MnZn power ferrite material is composed of main materials and dopants. The main materials are calculated by mole percentage and calculated by oxides, including:

[0042] 52~56mol% Fe 2 o 3 , 5-11 mol% ZnO, 33-43 mol% MnO.

[0043] Dopants are calculated as oxides by weight percentage, including:

[0044] 0.05~0.1wt%CaCO 3 , 0.1~0.3wt% TiO 2 , 0.1~0.3wt% Co 2 o 3 , 0.01~0.1wt% SnO 2 , 0.01~0.1wt%V 2 o 5 .

[0045] The preparation method of high-frequency low-loss MnZn power ferrite material comprises the following steps:

[0046] (1) Main ingredient formula

[0047] Using 52~56mol% Fe 2 o 3 , 5 ~ 11mol% ZnO, 33 ~ 43mol% MnO;

[0048] (2) Ball milling once

[0049] Put the above powder into a ball mill, add equal weight deionized water, and ball mill for 2 hours

[0050] (3) pre-burning

[0051] Dry the ball mill material obtained in step (2), and pre-fire it in a furnace at 920°C for 2 hours;

[0052] (4) Doping

[0053] Add...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a MnZn power ferrite for a MHz-level switching mode power supply and a preparation method of the MnZn power ferrite and relates to the electronic material technology. The ferrite is prepared from a main material and a dopant. The main material comprises in molar percentage of oxide as follows: 52mol%-56mol% of Fe2O3, 5mol%-11mol% of ZnO and 33mol%-43mol% of MnO; the dopantcomprises in molar percentage of oxide as follows: 0.05wt%-0.1wt% of CaCO3, 0.1wt%-0.3wt% of TiO2, 0.1wt%-0.3wt% of Co2O3, 0.01wt%-0.1wt% of SnO2 and 0.01wt%-0.1wt% of V2O5. The loss of the materialat high MHz frequency is effectively reduced, and the power loss is lower in the wideband range of 0.5-3 MHz and in the temperature range of 25-100 DEG C. Meanwhile, the preparation method has the advantages of being low in sintering temperature, energy-saving and environmentally friendly.

Description

technical field [0001] The invention relates to electronic material technology, in particular to MnZn power ferrite material. Background technique [0002] Soft magnetic ferrite is an important basic material for electronic devices. Magnetic cores made of soft magnetic materials are mainly used in the manufacture of electronic transformers, inductors and filters. Among them, the MnZn power ferrite material has high saturation magnetic induction (Bs), high initial permeability (μ i ) and low loss (P L ) and other advantages, are widely used in switching power supply transformers. At present, the switching power supply is developing in the direction of high frequency, miniaturization and high efficiency, and with the gradual increase of the application frequency of the switching power supply, the loss of transformers, inductors, etc. is increasing, especially when the frequency reaches MHz, the loss is even more sharp Increase, heat generation increases, which hinders the d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/26C04B35/622C04B35/626H01F1/37H01F41/02
CPCC04B35/2658C04B35/622C04B35/62605C04B35/62645C04B2235/3208C04B2235/3232C04B2235/3239C04B2235/3275C04B2235/3293C04B2235/6567C04B2235/6583C04B2235/77C04B2235/96C04B2235/9607H01F1/37H01F41/0246
Inventor 余忠胡鑫孙科郭荣迪蒋晓娜兰中文吴国华
Owner 江西尚朋电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com