A kind of porous ges single crystal nano sheet and preparation method thereof

A single crystal nano, silicon wafer technology, applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problem that the battery has not made obvious progress, to reduce the difficulty of preparation, ensure the integrity, increase the The effect of specific surface area

Inactive Publication Date: 2020-11-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the development of other fields of science and technology in recent years, batteries have not made significant progress.

Method used

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  • A kind of porous ges single crystal nano sheet and preparation method thereof
  • A kind of porous ges single crystal nano sheet and preparation method thereof
  • A kind of porous ges single crystal nano sheet and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A preparation method of porous GeS single crystal nanosheets, comprising the following steps:

[0029] (1) Place silicon wafers with a thickness of 500 μm and a width of 3 mm in acetone and isopropanol in sequence, ultrasonically clean them for 5 minutes, then dry them with high-purity nitrogen, and place them 12 to 15 cm downstream of the center of the tube furnace ;

[0030] (2) Place the quartz boat containing 10mgGeS powder in the center of the quartz tube, then evacuate to a background vacuum of 100mTorr, then flush with high-purity argon gas for 3 times, and then feed argon gas at a rate of 30sccm until The pressure is kept at 40Torr;

[0031] (3) After the pressure in the quartz tube is stabilized, the temperature of the tube furnace is raised at a rate of 50°C / min. In the opposite direction, refer to figure 1 ), to prevent the deposition of GeS powder in the heating process;

[0032] (4) When the deposition temperatures of the GeS powder and the substrate ri...

Embodiment 2

[0036] A preparation method of porous GeS single crystal nanosheets, comprising the following steps:

[0037] (1) Place silicon wafers with a thickness of 500 μm and a width of 3 mm in acetone and isopropanol in sequence, ultrasonically clean them for 5 minutes, then dry them with high-purity nitrogen, and place them 12 to 15 cm downstream of the center of the tube furnace ;

[0038] (2) Place the quartz boat containing 10mgGeS powder in the center of the quartz tube, then evacuate to a background vacuum of 80mTorr, then flush with high-purity argon gas for 3 times, and then feed argon gas at a rate of 10sccm until The pressure is kept at 20Torr;

[0039] (3) After the pressure in the quartz tube is stabilized, the temperature of the tube furnace is raised at a rate of 60°C / min. in the opposite direction) to prevent the deposition of GeS powder during the heating process;

[0040] (4) When the deposition temperatures of the GeS powder and the substrate rise to 500°C and 330...

Embodiment 3

[0044] A preparation method of porous GeS single crystal nanosheets, comprising the following steps:

[0045] (1) Place silicon wafers with a thickness of 500 μm and a width of 3 mm in acetone and isopropanol in sequence, ultrasonically clean them for 5 minutes, then dry them with high-purity nitrogen, and place them 12 to 15 cm downstream of the center of the tube furnace ;

[0046] (2) Place the quartz boat containing 10mgGeS powder in the center of the quartz tube, then evacuate to a background vacuum of 90mTorr, then flush it with high-purity argon gas for 3 times, and then feed argon gas at a rate of 15sccm until The pressure is kept at 22Torr;

[0047] (3) After the pressure in the quartz tube is stabilized, the tube furnace is heated up at a rate of 58°C / min. During the temperature rise process, the flow direction of the argon gas introduced is reversed (that is, it is different from the flow direction during the deposition. in the opposite direction) to prevent the d...

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Abstract

The invention discloses a porous GeS single crystal nanosheet and a preparation method thereof, comprising the following steps: (1) pretreating the substrate, and then placing the substrate in a tube furnace; (2) placing the GeS powder Place the quartz boat in the center of the quartz tube, then evacuate it, flush it with argon gas for 2 to 3 times, and pass in argon gas until the pressure is maintained at 20 to 40 Torr; Afterwards, naturally cool to room temperature, porous GeS single crystal nanosheets; wherein, in the heating process, the deposition process and the natural cooling process, argon gas is fed at a rate of 10-30 sccm, but the heating process and the natural cooling process are fed into argon gas. The direction of argon is opposite to the direction of the deposition process. The method of the invention reduces the production cost and preparation difficulty, and the prepared porous GeS single crystal nanosheets can be used to prepare Li batteries with large energy storage.

Description

technical field [0001] The invention belongs to the field of optoelectronic materials and devices, and in particular relates to a porous GeS single crystal nanosheet and a preparation method thereof. Background technique [0002] Today, batteries have become an indispensable energy storage device in people's lives. From mobile phones, digital cameras, notebook computers to power vehicles, batteries are everywhere. With the technological revolution and the advent of the chip era, people's demand for various new batteries is also increasing day by day. However, compared with the development of other fields of science and technology in recent years, batteries have not made significant progress. [0003] In the technology industry, batteries are often viewed as the heaviest, most expensive, least environmentally friendly and safety critical component of an electronic product. Among the performance indicators for judging batteries, capacity is often the most intuitive and the i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B29/64C30B23/00
CPCC30B23/00C30B29/46C30B29/64
Inventor 李春孙培华兰长勇何天应
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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