A kind of preparation method of light-emitting diode epitaxial wafer

Abstract

The invention discloses a preparation method of a light emitting diode epitaxial wafer, and belongs to the technical field of a semiconductor. The preparation method comprises the steps of providing asubstrate; enabling an atomic polarized adjustment layer to be grown on the substrate, wherein the atomic polarized adjustment layer is a compound formed by metal elements and a nitrogen element, themetal elements comprise at least one of aluminum and gallium, and the surface, opposite to the surface arranged on the substrate, of the atomic polarized adjustment layer is a nitrogen polarized surface; and performing growth of a gallium nitride buffer layer, a non-doped gallium nitride layer, an N type gallium nitride layer, a multi-quantum-well layer, an electron barrier layer and a P type gallium nitrogen layer on the atomic polarized adjustment layer in sequence. By virtue of the atomic polarized adjustment layer, the stress generated by lattice mismatch between the substrate and galliumnitride is released, so that spreading of dislocation and defects generated by lattice mismatch between the substrate and gallium nitride to the multi-quantum-well layer can be suppressed, thereby improving the growth quality of the multi-quantum-well layer, avoiding a polarization effect, and improving the luminous efficiency of the light emitting diode.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a light-emitting diode epitaxial wafer. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor light emitting device made by using the principle of semiconductor PN junction electroluminescence. The epitaxial wafer is the primary product in the process of manufacturing light-emitting diodes. [0003] The existing epitaxial wafer includes a sapphire substrate and a buffer layer, an undoped gallium nitride layer, an n-type gallium nitride layer, a multi-quantum well layer, an electron blocking layer and a p-type gallium nitride layer stacked on the sapphire substrate in sequence. Floor. Wherein, the multi-quantum well layer includes multiple quantum wells and multiple quantum barriers, the multiple quantum wells and multiple quantum barriers are alternately stacked, the quantum wells...

AI Technical Summary

Problems solved by technology

[0005] The buffer layer is an aluminum nitride layer or a gallium nitride layer. Since the metal polar surface (aluminum polar surface or gallium polar surface) is smoother than the non-metal polar surface (nitrogen polar surface), the stability Better, so the surface of the buffer layer setting undoped GaN layer is usually a metal polar surface, so that the stress and defects generated by the lattice mismatch between the substrate and GaN can easily extend to the MQW layer, The growth quality of the multi-quantum well layer is poor, resulting in a polarization effect, and the overlap of the electronic wave function of the multi-quantum well layer is weakened, which affects the recombination efficiency of electrons and holes, and reduces the luminous efficiency of the light-emitting diode.

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