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Au-supported mesoporous structure In2O3 nano sensitive material based NO2 sensor, preparation method and application thereof

A sensitive material and mesoporous structure technology, applied in nanotechnology for sensing, nanotechnology for materials and surface science, material resistance, etc., can solve the problems of increasing respiratory diseases and throat morbidity, and achieve appropriate Suitable for mass production, simple manufacturing process, and improved sensitivity

Inactive Publication Date: 2018-07-06
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Exposure to 80ppb environment for a long time will greatly increase the probability of respiratory disease and throat disease

Method used

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  • Au-supported mesoporous structure In2O3 nano sensitive material based NO2 sensor, preparation method and application thereof
  • Au-supported mesoporous structure In2O3 nano sensitive material based NO2 sensor, preparation method and application thereof
  • Au-supported mesoporous structure In2O3 nano sensitive material based NO2 sensor, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] with Au / In 2 o 3 Au loaded with In at a mass ratio of 0.05:1 2 o 3 Oxide semiconductor as a sensitive material to make NO 2 The sensor, its manufacturing process is:

[0037] 1. First add 1.72g of In(NO 3 ) 3 4.5H 2 O was added to 10 mL of absolute ethanol solution, and kept stirring until it was completely dissolved (stirring time was 60 min);

[0038] 2. Add 0.5g of SBA-15 template to the above solution, react at 40°C until the ethanol evaporates completely, and then calcinate at 300°C for 3 hours to obtain a light yellow powder. The resulting powder was added to 10 mL of absolute ethanol and kept stirring until it was completely dissolved. Add 0.86g of In(NO 3 ) 3 4.5H 2 O, react at 40°C until ethanol evaporates completely, and then calcinate at 500°C for 3 hours. The obtained powder was added to 10 mL of absolute ethanol solution, and kept stirring continuously until it was completely dissolved. Add 0.43g of In(NO 3 ) 3 4.5H 2 O, react at 40°C until ...

Embodiment 2

[0046] with Au / In 2 o 3 Au loaded with In at a mass ratio of 0.10:1 2 o 3 Oxide semiconductor as a sensitive material to make NO 2 sensor, its fabrication process is

[0047] 1. First add 1.72g of In(NO 3 ) 3 4.5H 2 O was added to 10 mL of absolute ethanol solution, and kept stirring until it was completely dissolved (stirring time was 60 min);

[0048]2. Add 0.5g of SBA-15 template to the above solution, react at 40°C until the ethanol evaporates completely, and then calcinate at 300°C for 3 hours to obtain a light yellow powder. The resulting powder was added to 10 mL of absolute ethanol and kept stirring until it was completely dissolved. Add 0.86g of In(NO 3 ) 3 4.5H 2 O, react at 40°C until ethanol evaporates completely, and then calcinate at 500°C for 3 hours. The obtained powder was added to 10 mL of absolute ethanol solution, and kept stirring continuously until it was completely dissolved. Add 0.43g of In(NO 3 ) 3 4.5H 2 O, react at 40°C until the etha...

Embodiment 3

[0056] with Au / In 2 o 3 The mass ratio of Au to In was 0.15:1 2 o 3 Oxide semiconductor as a sensitive material to make NO 2 sensor, its fabrication process is

[0057] 1. First add 1.72g of In(NO 3 ) 3 4.5H 2 O was added to 10 mL of absolute ethanol solution, and kept stirring until it was completely dissolved (stirring time was 60 min);

[0058] 2. Add 0.5g of SBA-15 template to the above solution, react at 40°C until the ethanol evaporates completely, and then calcinate at 300°C for 3 hours to obtain a light yellow powder. The resulting powder was added to 10 mL of absolute ethanol and kept stirring until it was completely dissolved. Add 0.86g of In(NO 3 ) 3 4.5H 2 O, react at 40°C until ethanol evaporates completely, and then calcinate at 500°C for 3 hours. The obtained powder was added to 10 mL of absolute ethanol solution, and kept stirring continuously until it was completely dissolved. Add 0.43g of In(NO 3 ) 3 4.5H 2 O, react at 40°C until the ethanol i...

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Abstract

The invention provides an u-supported mesoporous structure In2O3 nano sensitive material based NO2 sensor, a preparation method and the application in detection of NO2 as in atmosphere environment, and belongs to the technical field of semiconductor oxide gas sensors. The NO2 sensor comprises an Al2O3 insulated ceramic tube substrate of which the outer surface is provided with two parallel annularand independent gold electrodes, Au-supported mesoporous structure based In2O3 nano sensitive materials which coat the outer surface of an Al2O3 insulted ceramic tube and the gold electrodes, and a nickel-cadmium alloy coil which is arranged in the Al2O3 insulated ceramic tube. According to the sensor, Au particles are supported on the In2O3 material with a mesoporous structure, so that the NO2 sensitivity is improved; the lower limit of the material detection is low, so that the application scope in NO2 content detection is wide; the sensor has the characteristics of being simple in synthesizing method, low in cost, small in size, and suitable for mass production.

Description

technical field [0001] The invention belongs to the technical field of semiconductor oxide gas sensors, and in particular relates to an Au-loaded mesoporous structure In 2 o 3 NO of nano-sensitive materials 2 Sensor, preparation method and detection of NO in atmospheric environment 2 gas applications. Background technique [0002] NO 2 Not only is there great harm to the environment, but also the harm to human health cannot be underestimated. Nitrogen oxides mainly damage the respiratory tract, which in turn can cause a series of physical diseases. When the human body is exposed to NO with a gas concentration of 15ppb 2 Gas will cause physical discomfort. Exposure to 80ppb environment for a long time will greatly increase the probability of respiratory diseases and throat diseases. Due to the toxicity and destructiveness of nitrogen oxides, it is particularly important to develop gas sensing gases with low concentration and high sensitivity of nitrogen oxides. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12B82Y30/00B82Y15/00
Inventor 卢革宇李姗高原梁喜双刘方猛孙鹏闫旭
Owner JILIN UNIV
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