Groove-type low-barrier schottky diode and manufacturing method
A Schottky diode, trench technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as increased leakage current, and achieve enhanced surge capability, superior high voltage resistance, and reduced potential barriers. Effect
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[0033] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
[0034] The invention reduces the Schottky contact potential barrier of the device by improving the device structure and process without changing the Schottky contact metal, and finally reduces the forward voltage drop and conduction loss of the device.
[0035] On the SiC substrate of the first conductivity type, a buffer layer of the first conductivity type is epitaxially, the thickness of the buffer layer is between 0.5-2 μm, and the concentration is 1E18cm -3 Left and right; epitaxial drift ...
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