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Caching multi-bit hard error detection and fault tolerance device and method under near threshold voltage

A high-speed cache and threshold voltage technology, applied in the direction of error detection/correction, redundant code error detection, response error generation, etc., can solve the problems of lack of efficiency and reliability, and achieve the effect of improving reliability

Active Publication Date: 2018-06-19
WUHAN UNIV OF TECH
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AI Technical Summary

Problems solved by technology

[0008] Combining all existing technical solutions, there is no efficient and reliable fault-tolerant solution for multi-bit hard errors exceeding 4-bit hard errors in cache entries

Method used

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  • Caching multi-bit hard error detection and fault tolerance device and method under near threshold voltage
  • Caching multi-bit hard error detection and fault tolerance device and method under near threshold voltage
  • Caching multi-bit hard error detection and fault tolerance device and method under near threshold voltage

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Embodiment Construction

[0042] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0043] attached figure 1 It is a structure diagram of a detection and fault tolerance device for cache multi-bit hard errors under a near-threshold voltage according to the present invention. The whole device is composed of four parts: cache memory, BIST circuit, data compression module and data correction module. Wherein, the BIST circuit is used to detect the positions of hard errors in the cache memory and the memory of the device, the cache memory is composed of a Cache data memory and a Cache tag memory, and the data correction module includes an ECC memory, an error correction encoder and an error correction The decoder, data compression module includes an error map memory, a compression map memory, an empty sub-block detector, a sub-block compressor and a sub-block decompressor.

[0044] The thick line in the figure indicates the criti...

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PUM

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Abstract

The invention relates to a caching multi-bit hard error detection and fault tolerance device and method under a near threshold voltage. The detection and fault tolerance device comprises a Cache datamemory, a Cache tag memory, a BIST circuit, an ECC memory, an error correction encoder, an error correction decoding, an error map memory, a compression map memory, an empty sub-block detector, a sub-block compressor and a sub-block decompressor, and ECC error correction codes and empty sub-block data compression methods of single-error correction double-error detection (SECDED) are used for detecting and conducting fault tolerance on multi-bit hard errors occurring in the Cache data memory according to a selected Cache management strategy. A microprocessor is achieved by the device and method, the multi-bit hard errors caused by fluctuations of process parameters in a cache memory can be detected in the microprocessor, fault tolerance can be conducted, and reliability when the microprocessor is under a low power consumption environment and uses a near threshold voltage technology is improved.

Description

technical field [0001] The invention relates to a detection and fault tolerance device for data errors in a microprocessor cache, in particular to a detection and fault tolerance device for multi-bit hard errors in a microprocessor cache under near-threshold voltage. The invention also relates to a detection and fault tolerance method for data errors in the cache memory of a microprocessor under a near-threshold voltage. Background technique [0002] As semiconductor technology improves, more transistors can be integrated on a chip, doubling every 18 months in accordance with Moore's Law. Therefore, a chip can theoretically integrate more transistor circuits. However, energy and power consumption limitations have largely prevented the normal use of more transistors, making it difficult for chip performance to continue to improve. The near-threshold voltage technology reduces the power supply voltage to near the transistor threshold voltage, which greatly reduces power cons...

Claims

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Application Information

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IPC IPC(8): G06F11/10
CPCG06F11/1044G06F11/1064
Inventor 刘伟魏志刚杜薇
Owner WUHAN UNIV OF TECH
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