Photoresist pattern preparing method

A photoresist pattern and photoresist technology, which is applied in the photoplate making process of the pattern surface, optical mechanical equipment, optics, etc., can solve the problems of expensive photomask, complicated exposure operation, and low precision, so as to save Photomask, improve preparation accuracy, and save cost

Inactive Publication Date: 2018-06-12
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, a photomask is needed to form the pattern of the photoresist during the exposure process, however, the photomask is expensive, and the exposure operation is complicated and the precision is not high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoresist pattern preparing method
  • Photoresist pattern preparing method
  • Photoresist pattern preparing method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] In the existing method for preparing a photoresist pattern, a photomask is used to form the photoresist pattern during the exposure process, but the photomask is expensive and the exposure operation is complicated. For this reason, the present invention proposes a novel method for preparing a photoresist pattern without using a photomask. According to the present invention, it is proposed to use the standing wave field principle to prepare the photoresist pattern, so that the photomask can be omitted, the manufacturing cost can be saved, and the precision of the photoresist pattern can be improved at the same time. A method of preparing a photoresist pattern according to the present invention will be described in detail below with reference to the accompanying drawings.

[0029] First, the following will refer to Figure 1A and Figure 1B To explain the principle of the standing wave field on which the method for preparing a photoresist pattern according to the present...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides a photoresist pattern preparing method. The photoresist pattern preparing method comprises forming a photoresist layer containing photoinitiator particles on a substrate; placing the substrate with the formed photoresist layer inside a standing wave field so that the photoinitiator particles can be aggregated on the substrate to form a preset pattern; vacuum-drying, pre-baking and ultraviolet-radiating the substrate with the preset pattern to subject the photoinitiator particles in standing wave points to cross-linking reaction; removing photoresist in areas without cross-linking reaction through developing, performing an after-baking process to obtain a planned photoresist pattern. The photoresist pattern preparing method prepares the photoresist pattern according to the principles of standing wave fields, thereby saving a photomask, reducing costs and the operation complexity and improving the preparation precision of the photoresist pattern.

Description

technical field [0001] The present invention relates to the technical field of preparation of photoresist patterns, and more specifically, to a method for preparing photoresist patterns. Background technique [0002] At present, the method for preparing a photoresist pattern is completed by five steps of coating, pre-baking, exposure, development and post-baking. Usually, a photomask is needed to form a photoresist pattern during the exposure process, however, the photomask is expensive, and the exposure operation is complicated and the precision is not high. Contents of the invention [0003] Exemplary embodiments of the present invention provide a novel method for preparing a photoresist pattern to overcome problems in the prior art. [0004] The invention provides a method for preparing a photoresist pattern. The preparation method comprises the following steps: S1, forming a photoresist layer comprising photoinitiator particles on the substrate; S2, placing the subst...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00
CPCG03F7/00
Inventor 赵芬利
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap